Wafer direct bonding: Tailoring adhesion between brittle materials

Materials Science and Engineering R: Reports

Volumn 25, Issue 1, 1999, Pages 1-88

  Plößl, Andreas ^a   Kräuter, Gertrud ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; BOND STRENGTH (CHEMICAL); BONDING; BRITTLENESS; ELECTRONIC PROPERTIES; HYDROGEN BONDS; OPTOELECTRONIC DEVICES; SILICON ON INSULATOR TECHNOLOGY; SURFACE CHEMISTRY; SURFACE TREATMENT; VAN DER WAALS FORCES;

FUSION BONDING; WAFER DIRECT BONDING;

SILICON WAFERS;

EID: 6744225835     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(98)00017-5     Document Type: Article

References (473)

1. G. Wallis, D.I. Pomerantz, Conference on tube techniques, Institute of Electrical and Electronics Engineers, New York, NY, 1968, p. 10 (New York, NY, 17-18 September 1968).
2. G. Wallis, D.I. Pomerantz, J. Appl. Phys. 40 (1969) 3946.
3. E. Obermeier, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 212-220 (Reno, NV, 21-26 May 1995).
4. J.N. Israelachvili, Intermolecular and Surface Forces, Academic Press, New York, 1985.
5. Philips J. Res. Special issue on Direct Bonding 49 (1995) 1.
6. U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992 (Phoenix, AZ, 13-18 October 1991).
7. M.A. Schmidt, T. Abe, C.E. Hunt, H. Baumgart (Eds.), Proc. 2nd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, vol. 93-29, Electrochemical Society, Pennnington, NJ, 1993 (Hawaii, 16-21 May 1993).
8. C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele, (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, vol. 95-97, Electrochemical Society, Pennnington, NJ, 1995) (May 1995, Reno, Nevada).
9. U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. PV 97-136, Electrochemical Society, Pennington, NJ, 1998 (1-5 September 1997, Paris, France).
10. J. Haisma, G.A.C.M. Spierings, U.K.P. Biermann, J.A. Pals, Jpn. J. Appl. Phys. 28 (1989) 1426.
11. P.W. Barth, Sens. Actuators A23 (1990) 919 (5th Int. Conf. on Solid-State Sensors and Actuators and Eurosensors III. Montreux, Switzerland, 25-30 June 1989).
12. P.W. Barth, Sens. Actuators A23 (1990) 919 (5th Int. Conf. on Solid-State Sensors and Actuators and Eurosensors III. Montreux, Switzerland, 25-30 June 1989).
13. W.P. Maszara, J. Electrochem. Soc. 138 (1991) 341.
14. C. Harendt, H.G. Graf, B. Höfflinger, E. Penteker, J. Micromech. Microeng. 2 (1992) 113.
15. S. Bengtsson, J. Electron. Mater. 21 (1992) 841.
16. D.L. Kendall, C.B. Fleddermann, K.J. Malloy, in: K.T. Faber, K.J. Malloy (Eds.), Semiconductors and Semimetals, 37: The Mechanical Properties of Semiconductors, Academic Press, Boston, MA, 1992, pp. 293-337.
17. J. Haisma, B.A.C.M. Spierings, U.K.P. Biermann, A.A. van Gorkum, Appl. Opt. 33 (1994) 1154.
18. Q.-Y. Tong, U. Gösele, Mater. Chem. Phys. 37 (1994) 101.
19. F.S. d'Aragona, L. Ristic, in: L. Ristic (Ed.), Sensor Technology and Devices, Artech House, Boston, 1994, pp. 157-201.
20. D.I. Babic, J.E. Bowers, E.L. Hu, L. Yang, K. Carey, Int. J. High Speed Electron. Syst. 8 (1997) 357.
21. M.G. Milvidskii, K.L. Enisherlova, V.J. Reznick, T.F. Rusak, E.N. Chervyakova, Adv. Perform. Mater. 4 (1997) 165.
22. U. Gösele, Q.-Y. Tong, Annu. Rev. Mater. Sci. 28 (1998) 215.
23. Q.-Y. Tong, U. Gösele, Semiconductor Wafer Bonding: Science and Technology, Wiley, New York, 1998.
24. R. Maboudian, R.T. Howe, J. Vac. Sci. Technol. B 15 (1997) 1.
25. R. Maboudian, Surf. Sci. Rep. 30 (1998) 207.
26. K. Komvopoulos, Wear 200 (1996) 305.
27. N. Tas, T. Sonnenberg, H. Jansen, R. Legtenberg, M. Elwenspoek, J. Micromech. Microeng. 6 (1996) 385.
28. U. Gösele, H. Stenzel, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 33-46 (Reno, NV, 21-26 May 1995).
29. J. Haisma, Philips J. Res. 49 (1995) 165.
30. B. Anglicus, De genuinis rerum coelestium, terrestrium at inferarum proprietatibus rerum (Book 16, Chap. 4, p. 718, Wolfgang Richter, Frankfurt, 1601). (Middle English translation by John Trevissa rendered into Modern by S. Reimer: When a plate of gold is to be merged with or joined to a plate of silver, one needs to keep in mind three things: dust, air, and moisture. If any dust, air, or moisture comes between the two plates, they cannot be joined together, the one to the other. Therefore it is necessary to join these two metals together in a completely clean and still place. And when they are joined together in such a manner, they become so inseparable that they cannot later be taken apart).
31. G. Galilei, Discorsi e dimostrazioni matematiche, intorno à due nuove scienze (Giornata prima); Elzevier, Leiden, 1638.
32. J.T. Desaguliers, Philos. Trans. R. Soc. Lond. 33 (1725) 345.
33. D. Dowson, History of Tribology (Longman, London, 1979), p. 159.
34. J.T. Desaguliers (1725), quoted in D. Dowson, History of Tribology, Longman, London, 1979.
35. D. Dowson, History of Tribology, Longman, London, 1979, p. 161.
36. U.K.P. Biermann, A.A. van Gorkum, J.A. Pals, Philips J. Res. 49 (1995) 1.
37. J.W. Obreimoff, Proc. R. Soc. Lond. 127 (1930) 290.
38. Rayleigh Lord, Proc. Phys. Soc. A 156 (1936) 326.
39. A.C. Egerton, Obituary Notices of Fellows of the Royal Society 6 (1949) 503.
40. J. Haisma, Philips Res. Repts Suppl. 1 (1967) 1 (Thesis, University of Utrecht, June 1966).
41. H.G. van Bueren, J. Haisma, H. de Lang, Phys. Lett. 2 (1962) 340.
42. G.A. Antypas, J. Edgecumbe, Appl. Phys. Lett. 26 (1974) 371.
43. E. Yablonovitch, T. Gmitter, J.P. Harbison, R. Bhat, Appl. Phys. Lett. 51 (1987) 2222.
44. Z.L. Liau, D.E. Mull, Appl. Phys. Lett. 56 (1990) 737.
45. M. Shimbo, K. Furukawa, K. Fukuda, K. Tanzawa, J. Appl. Phys. 60 (1986) 2987.
46. J.B. Lasky, Appl. Phys. Lett. 48 (1986) 78.
47. W. Kern (Ed.), Handbook of Semiconductor Wafer Cleaning Technology, Noyes Publications, Park Ridge, NJ, 1993.
48. K. Ljungberg, A. Söderbärg, U. Jansson, Appl. Phys. Lett. 67 (1995) 650.
49. G. Kissinger, W. Kissinger, Phys. Status Solidi A 123 (1991) 185.
50. Y. Bäcklund, K. Hermansson, L. Smith, J. Electrochem. Soc. 139 (1992) 2299.
51. Q.-Y. Tong, G. Kaido, L. Tong, M. Reiche, F. Shi, J. Steinkirchner, T.Y. Tan, U. Gösele, J. Electrochem. Soc. 142 (1995) L201.
52. M. Miyashita, T. Tusga, K. Makihara, T. Ohmi, J. Electrochem. Soc. 139 (1992) 2133.
53. J.R. Vig, J.W. Le Bus, IEEE Trans. Parts Hybrids Packaging PHP-12 (1976) 365.
54. G. Pietsch, Struktur und Chemie technologischer Siliciumoberflächen (in German), Reihe 9: Elektronik, 148, VDI-Verlag, Düsseldorf, Germany, 1992.
55. W.P. Maszara, B.-L. Jiang, A. Yamada, G.A. Rozgonyi, H. Baumgart, A.J.R. de Kock, J. Appl. Phys. 69 (1991) 257.
56. R. Stengl, K. Mitani, V. Lehmann, U. Gösele, in 1989 IEEE SOS/SOI Technology Conference, IEEE, New York, NY, 1989, pp. 123-124 (Stateline, NV, 3-5 October 1989).
57. U. Gösele, Q.-Y. Tong, in: M.A. Schmidt, T. Abe, C.E. Hunt, H. Baumgart (Eds.), Proc. 2nd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1993, pp. 395-405 (Hawai, 21-16 May 1992).
58. Q.-Y. Tong, U. Gösele, J. Electrochem. Soc. 142 (1995) 3975.
59. H.H. Yu, Z. Suo, J. Mech. Phys. Solids 46 (1998) 829.
60. Q.-Y. Tong, S. Krasnicki, U. Gösele, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 155-162 (Reno, NV, 21-26 May 1995).
61. C. Gui, H. Albers, J.G.E. Gardeniers, M. Elwenspoek, P.V. Lambeck, Microsyst. Technol. 3 (1997) 122.
62. K.N.G. Fuller, D. Tabor, Proc. R. Soc. Lond. A, Math. Phys. Sci. 345 (1975) 327.
63. C. Gui, M. Elwenspoek, J.G.E. Gardeniers, P.V. Lambeck, J. Electrochem. Soc. 145 (1998) 2198.
64. Q.-Y. Tong, T.-H. Lee, W.-J. Kim, T.Y Tan, U. Gösele, in 1996 IEEE Int. SOI Conf. Proc., IEEE, New York, NY, 1996, pp. 36-37 (Sanibel Island, FL, 30 September-3 October 1996).
65. A.A. Yasseen, N.J. Mourlas, M. Mehregany, J. Electrochem. Soc. 144 (1997) 237.
66. S.R. Bhagavatula, R. Komanduri, Philos. Mag. A 74 (1996) 1003.
67. S.R. Hah, T.E. Fischer, J. Electrochem. Soc. 145 (1998) 1708.
68. R. Stengl, K.-Y. Ahn, U. Gösele, Jpn. J. Appl. Phys. 27 (1988) L2364.
69. V. Lehmann, K. Mitani, R. Stengl, T. Mii, U. Gösele, Jpn. J. Appl. Phys. 28 (1989) L2141.
70. R. Stengl, T. Tan, U. Gösele, Jpn. J. Appl. Phys. 28 (1989) 1735.
71. G. Cha, Dissertation, Duke University, Durham, NC, 1994.
72. S. Bengtsson, K. Ljungberg, J. Vedde, Appl. Phys. Lett. 69 (1996) 3381.
73. U. Gösele, S. Hopfe, S. Li, S. Mack, T. Martini, M. Reiche, E. Schmidt, H. Stenzel, Q.-Y. Tong, Appl. Phys. Lett. 67 (1995) 863.
74. R. Wilson, H.S. Gamble, S.J.N. Mitchell, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 433-442 (Phoenix, AZ, 13-18 October 1991).
75. C. Parkes, E. Murray, H.S. Gamble, B.M. Armstrong, S.J.N. Mitchell, G.A. Armstrong, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 321-330 (Phoenix, AZ, 13-18 October 1991).
76. C. Parkes, S.J.N. Mitchell, B.M. Armstrong, H.S. Gamble, E.T.G. Ling, Int. J. Mater. Prod. Technol. 11 (1996) 145.
77. T. Martini, Thesis, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany, 1997 (in German).
78. T. Martini, S. Hopfe, S. Mack, U. Gösele, Sens. Actuators A, 1999, submitted.
79. Q.-Y. Tong, G. Cha, R. Gafiteanu, U. Gösele, J. Microelectromech. Syst. 3 (1994) 29.
80. H. Ohashi, K. Furukawa, M. Atsuta, A. Nakagawa, K. Imamura, in 1987 International Electron Devices Meeting, IEDM. Technical Digest (Cat. No.87CH2515-5), IEEE, New York, NY, 1987, pp. 678-681 (Washington, DC, 6-9 December 1987).
81. T. Abe, M. Nakano, T. Itoh, in: D.N. Schmidt (Ed.), Proc. 4th Int. Symp. on Silicon-on-Insulator Technology and Devices, Electrochemical Society, Pennington, NJ, 1990, pp. 61-71 (Montreal, Que., Canada, 8-11 May 1990).
82. K. Mitani, V. Lehmann, R. Stengl, D. Feijoo, U.M. Gösele, H.Z. Massoud, Jpn. J. Appl. Phys. 30 (1991) 615.
83. K. Mitani, U.M. Gösele, Appl. Phys. A 54 (1992) 543.
84. S. Mack, H. Baumann, U. Gösele, Sens. Actuators A56 (1996) 273.
85. S. Mack, H. Baumann, U. Gösele, H. Werner, R. Schlögl, J. Electrochem. Soc. 144 (1997) 1106.
86. K. Mitani, V. Lehmann, U. Gösele, in: Technical Digest, IEEE Solid-State Sensor and Actuator Workshop, IEEE, New York, NY, 1990, pp. 74-77 (Hilton Head Island, SC, 4-7 June 1990).
87. D. Bollmann, C. Landesberger, P. Ramm, K. Haberger, Jpn. J. Appl. Phys. 35 (1996) 3807.
88. N.Q. Khánh, A. Hámori, M. Fried, C. Dücsó, J. Gyulai, J. Electrochem. Soc. 142 (1995) 2425.
89. H. Baumgart, E.F. Steigmeier, H. Auderset, T. Abe, T.J. Letavic, R.D. Pinker, E. Arnold, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 375-385 (Phoenix, AZ, 13-18 October 1991).
90. B.T. Khuri-Yakub, G. Wade, A.C. Wey, in: G.L. Trigg, E.S. Vera, W. Greulich (Eds.), Encyclopedia of Applied Physics, Wiley-VCH Verlag GmbH, Weinheim, Germany, 1996, pp. 545-571.
91. S. Schulze, I. Albrecht, K. Kosbi, M. Gebhard, W. Benecke, S. Bosek, in: D. Denton, P.J. Hesketh, H. Hughes (Eds.), Proc. 2nd Int. Symp. on Microstructures and Microfabricated Systems, Electrochemical Society, Pennington, NJ, 1995, pp. 309-318 (Chicago, IL, 8-13 October 1995).
92. M. Dudley, in: G.L. Trigg, E.S. Vera, W Greulich (Eds.), Encyclopedia of Applied Physics, vol. 21, Wiley-VCH Verlag GmbH, Weinheim, Germany, 1997, pp. 533-547.
93. T. Abe, T. Takei, A. Uchiyama, K. Yoshizawa, Y. Nakazato, Jpn. J. Appl. Phys. 29 (1990) L2311.
94. M.J.J. Theunissen, A.H. Goemans, A.J.R. de Kock, J. Haisma, C.W.T. Bulle-Lieuwma, D.E.W. Vandenhoudt, J. Electrochem. Soc. 137 (1990) 3975.
95. O. Okabayashi, H. Shirotori, H. Sakurazawa, E. Kanda, T. Kokoyama, M. Kawashima, J. Cryst. Growth 103 (1990) 456 (3rd Int. Symp. on Defect Recognition and Image Processing in III-V Compounds (DRIP-III), Tokyo, Japan, 22-25 September 1989).
96. O. Okabayashi, H. Shirotori, H. Sakurazawa, E. Kanda, T. Kokoyama, M. Kawashima, J. Cryst. Growth 103 (1990) 456 (3rd Int. Symp. on Defect Recognition and Image Processing in III-V Compounds (DRIP-III), Tokyo, Japan, 22-25 September 1989).
97. S. Hahn, K. Kugimiya, K. Vojtechovsky, M. Sifalda, M. Yamashita, P.R. Blaustein, K. Takahashi, Semicond. Sci. Technol. 7 (1992) A80 (Defect Recognition in Semiconductors Before and After Processing, 4th Int. Conf., Wilmslow, UK, 18-22 March 1991).
98. S. Hahn, K. Kugimiya, K. Vojtechovsky, M. Sifalda, M. Yamashita, P.R. Blaustein, K. Takahashi, Semicond. Sci. Technol. 7 (1992) A80 (Defect Recognition in Semiconductors Before and After Processing, 4th Int. Conf., Wilmslow, UK, 18-22 March 1991).
99. M. Reiche, personal communication, 1998.
100. Sun Jin Yun, Kun-Young Ahn, Kyoung-Soo Yi, Sang-Won Kang, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 102-111 (Phoenix, AZ, 13-18 October 1991).
101. K. Mitani, D. Feijoo, G. Cha, U.M. Gösele, Jpn. J. Appl. Phys. 31 (1992) 969.
102. R.D. Horning, A. Mirza, R.R. Martin, J. Electrochem. Soc. 141 (1994) 796.
103. A.W. Adamson, Physical Chemistry of Surfaces, 5th ed., Wiley, New York, 1990.
104. W. Gutowski, in: L.-H. Lee (Ed.), Fundamentals of Adhesion, Plenum, New York, 1991, pp. 87-135.
105. B.R. Lawn, Fracture of Brittle Solids, Cambridge Solid State Science Series, 2nd ed., Cambridge University Press, Cambridge, 1993.
106. G.R. Irwin, J. Appl. Mech. 24 (1957) 361.
107. G.R. Irwin, in: S. Flügge (Ed.), Handbuch der Physik: Elastizität und Plastizität, vol. 6, Springer, Berlin, 1958, pp. 551-590.
108. Y. Murakami (Ed.), Stress Intensity Factors Handbook, vol. 1 and 2, Pergamon Press, Oxford, 1987.
109. W.P. Maszara, G. Goetz, A. Caviglia, J.B. McKitterick, J. Appl. Phys. 64 (1988) 4943.
110. J. Bagdahn, M. Petzold, M. Reiche, K. Gutjahr, in: U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. 97-136, Electrochemical Society, Pennington, NJ, 1998, pp. 291-298.
111. S. Mack, personal communication, 1997.
112. J.G. Fleming, E. Roherty-Osmun, N.A. Godshall, J. Electrochem. Soc. 139 (1992) 3300.
113. T. Martini, J. Steinkirchner, U. Gösele, J. Electrochem. Soc. 144 (1997) 354.
114. E. Orowan, Nature 154(3906) (1944) 341.
115. R.D. Horning, D.W. Burns, A.I. Akinwande, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Conf. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1992, pp. 386-393 (Phoenix, AZ, 13-18 October 1991).
116. T. Shimatsu, R.H. Mollema, D. Monsma, E.G. Keim, J.C. Lodder, J. Vac. Sci. Technol. A 16 (1998) 2125.
117. J. Bagdahn, D. Katzer, M. Petzold, (to be published) Micro System Technologies 98, 1-3 December 1998, Potsdam, Germany.
118. H. Dannenberg, J. Appl. Polymer Sci. V (1961) 125.
119. B. Müller, A. Stoffel, J. Micromech. Microeng. 1 (1991) 161.
120. J. Bagdahn, D. Katzer, M. Petzold, M. Wiemer, in: U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. 97-36, Electrochemical Society, Pennington, NJ, 1998, pp. 285-290.
121. M. Petzold, M. Petersilge, T. Abe, M. Reiche, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 380-389 (Reno, NV, 21-26 May 1995).
122. S.N. Farrens, C.E. Hunt, B.E. Roberds, J.K. Smith, J. Electrochem. Soc. 141 (1994) 3225.
123. S. Mack, Eine vergleichende Untersuchung der physikalisch-chemischen Prozesse an der Grenzschicht direkt und anodisch verbundener Festkörper (in German), Reihe 2: Fertigungstechnik, 436 VDI Verlag GmbH, Düsseldorf, Germany, 1997.
124. S.U. Faßbender, A. Wegner, W. Arnold, (1996) (DGZfP-Jahrestagung 1996, Lindau, 13-15 May 1996).
125. S. Schulze, W. Benecke, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. 97-136, The Electrochemical Society, Pennington, NJ, 1998, pp. 272-279.
126. H.-Y. Hao, H.J. Maris, D.K. Sadana, Electrochem. Solid-State Lett. 1 (1998) 54.
127. D.K. Sadana, H.-Y. Hao, H.J. Maris, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. PV97-136, The Electrochemical Society, Pennington, NJ, 1998, pp. 358-364 (Paris, France, September 1997).
128. S. Mack, H. Baumann, H. Werner, R. Schlögl, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 299-306.
129. R. Brendel, J. Appl. Phys. 72 (1992) 794.
130. D. Feijóo, Y.J. Chabal, S.B. Christman, Appl. Phys. Lett. 65 (1994) 2548.
131. Y.J. Chabal, M.A. Hines, D. Feijóo, J. Vac. Sci. Technol. A 13 (1995) 1719 (41st National Symposium of the American Vacuum Society, Denver, CO, 24-29 October 1994).
132. Y.J. Chabal, M.A. Hines, D. Feijóo, J. Vac. Sci. Technol. A 13 (1995) 1719 (41st National Symposium of the American Vacuum Society, Denver, CO, 24-29 October 1994).
133. M.K. Weldon, V.E. Marsico, Y.J. Chabal, D.R. Hamann, S.B. Christman, E.E. Chaban, Surf. Sci. 368 (1996) 163 (8th Int. Conf. on Vibrations at Surfaces. Birmingham, UK, 23-27 June 1996).
134. M.K. Weldon, V.E. Marsico, Y.J. Chabal, D.R. Hamann, S.B. Christman, E.E. Chaban, Surf. Sci. 368 (1996) 163 (8th Int. Conf. on Vibrations at Surfaces. Birmingham, UK, 23-27 June 1996).
135. M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, E.E. Chaban, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 15 (1997) 1065 (24th Conf. on the Physics and Chemistry of Semiconductor Interfaces, Research Triangle Park, NC, 12-15 January 1997).
136. M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, E.E. Chaban, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 15 (1997) 1065 (24th Conf. on the Physics and Chemistry of Semiconductor Interfaces, Research Triangle Park, NC, 12-15 January 1997).
137. K. Mitani, V. Lehmann, Q.-Y. Tong, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 260-270 (Phoenix, AZ, 13-18 October 1991).
138. M.K. Weldon, Y.J. Chabal, D.R. Hamann, S.B. Christman, E.E. Chaban, L.C. Feldman, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 14 (1996) 3095 (Physics and Chemistry of Semiconductor Interfaces, 23rd Annu. Conf., La Jolla, CA, 21-25 January 1996).
139. M.K. Weldon, Y.J. Chabal, D.R. Hamann, S.B. Christman, E.E. Chaban, L.C. Feldman, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 14 (1996) 3095 (Physics and Chemistry of Semiconductor Interfaces, 23rd Annu. Conf., La Jolla, CA, 21-25 January 1996).
140. M.K. Weldon, Y.J. Chabal, S.B. Christman, E.E. Chaban, L.C. Feldman, C.A. Goodwin, C.-M. Hsieh, in: P.L.F. Hemment, S. Cristoloveanu, K. Izumi, T. Houston, S. Wilson (Eds.), Proc. 7th Int. Symp. on Silicon-On-Insulator Technology and Devices, Electrochemical Society, Pennington, NJ, 1996, pp. 121-132 (Los Angeles, CA, 5-10 May 1996).
141. Y.J. Chabal, D. Feijóo, S.B. Christman, C.A. Goodwin, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 305-314 (Reno, NV, 21-26 May 1995).
142. Q.-Y. Tong, U. Gösele, J. Electrochem. Soc. 143 (1996) 1773.
143. S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley, New York, 2nd ed., 1994, p. 451.
144. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979.
145. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 633.
146. S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley, New York, 2nd ed., 1994, p. 465.
147. S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, Wiley, New York, 2nd ed., 1994, p. 466.
148. 2 and Its Interfaces: Symposium, Materials Research Society, Pittsburgh, PA, 1988, pp. 247-252 (Boston, MA, 30 November-5 December 1987).
149. G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavachari, Appl. Phys. Lett. 56 (1990) 656.
150. Q.-Y. Tong, E. Schmidt, U. Gösele, M. Reiche, Appl. Phys. Lett. 64 (1994) 625.
151. H. Himi, M. Matsui, S. Fujino, T. Hattori, Jpn. J. Appl. Phys. 33 (1994) 6.
152. A. Streitwieser, C.H. Heathcock, Organische Chemie, Verlag Chemie, Weinheim, Germany, 1980 (German translation of Introduction to Organic Chemistry, Macmillan Publishing, New York, 1976).
153. A.F. Holleman, E. Wiberg, Lehrbuch der anorganischen Chemie (in German), 90th ed., Walter de Gruyter, Berlin, Germany, 1976, p. 544.
154. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 627.
155. L. Pauling, The Nature of the Chemical Bond, 3rd ed., Cornell University Press, Ithaka, New York, 1960.
156. R. Sokoll, H.J. Tiller, T. Hoyer, J. Electrochem. Soc. 138 (1991) 2150.
157. K. Hermansson, U. Lindberg, B. Hok, G. Palmskog, in: TRANSDUCERS '91, 1991 Int. Conf. on Solid-State Sensors and Actuators, Digest of Technical Papers, IEEE, New York, NY, 1991, pp. 193-196 (San Francisco, CA, 24-27 June 1991).
158. K. Ljungberg, Y. Bäcklund, A. Söderbärg, M. Bergh, M.O. Andersson, S. Bengtsson, J. Electrochem. Soc. 142 (1995) 1297.
159. K. Ljungberg, A. Söderbärg, Y. Bäcklund, Appl. Phys. Lett. 62 (1993) 1362.
160. S. Bengtsson, O. Engström, J. Appl. Phys. 66 (1989) 1231.
161. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 639.
162. K.-Y. Ahn, R. Stengl, T.Y. Tan, U. Gösele, P. Smith, J. Appl. Phys. 65 (1989) 561.
163. L. Ling, F. Shimura, J. Electrochem. Soc. 140 (1993) 252.
164. K.-Y. Ahn, R. Stengl, T.Y. Tan, U. Gösele, P. Smith, Appl. Phys. A50 (1990) 85.
165. T. Abe, A. Uchiyama, K. Yoshizawa, Y. Nakazato, M. Miyawaki, T. Ohmi, Jpn. J. Appl. Phys. 29 (1990) L2315.
166. L. Ling, F. Shimura, J. Appl. Phys. 71 (1992) 1237.
167. S.-I. Ishigami, Y. Kawai, H. Furuya, T. Shingyouji, Y. Saitoh, Jpn. J. Appl. Phys. 32 (1993) 5463.
168. B.K. Ju, Y.H. Lee, K.H. Tchah, M.H. Oh, J. Electrochem. Soc. 142 (1995) 547.
169. R. Scholz, A. Schumacher, personal communication, 1998.
170. U. Gösele, E. Schroer, J.-Y. Huh, Appl. Phys. Lett. 67 (1995) 241.
171. E. Schroer, S. Hopfe, Q.Y. Tong, U. Gösele, W. Skorupa, J. Electrochem. Soc. 144 (1997) 2205.
172. G. Kräuter, A. Schumacher, U. Gösele, Sens. Actuators A, Phys. 70 (1998) 271.
173. G. Schulze, M. Henzler, Surf. Sci. 124 (1983) 336.
174. P. Gupta, V.L. Colvin, S.M. George, Phys. Rev. B 37(14) (1988) 8234.
175. J. Steinkirchner, T. Martini, M. Reiche, G. Kästner, U. Gösele, Adv. Mater. 7 (1995) 662.
176. S. Schulze, M. Noffke, I. Albrecht, W. Benecke, M. Mennig, in: D. Denton, P.J. Hesketh, H. Hughes (Eds.), Proc. 2nd Int. Symp. on Microstructures and Microfabricated Systems, Electrochemical Society, Pennington, NJ, 1995, pp. 328-336 (Chicago, IL, 8-13 October 1995).
177. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 10.
178. A. Schumacher, personal communication, 1998.
179. Jiwei Jiao, Deren Lu, Bin Xiong and Weiyuan Wang, Sens. Actuators A50 (1995) 117 (Eighth IEEE International Workshop on Micro Electro Mechanical Systems, MEMS '95, Amsterdam, Netherlands, 29 January-2 February 1995).
180. Jiwei Jiao, Deren Lu, Bin Xiong and Weiyuan Wang, Sens. Actuators A50 (1995) 117 (Eighth IEEE International Workshop on Micro Electro Mechanical Systems, MEMS '95, Amsterdam, Netherlands, 29 January-2 February 1995).
181. A. Berthold, M.J. Vellekoop, Sens. Actuators A60 (1997) 208 (EUROSENSORS X. Leuven, Belgium, 8-11 September 1996).
182. A. Berthold, B. Jakoby, M.J. Vellekoop, Sens. Actuators A, Phys. 68 (1998) 410.
183. Q.-Y. Tong, W.J. Kim, T.-H. Lee, U. Gösele, Electrochem. Solid-State Lett. 1 (1998) 52.
184. G.-L. Sun, J. Zhan, Q.-Y. Tong, S.-J. Xie, Y.-M. Cai, S.-J. Lu, J. Phys. Colloq. 49 (1988) 79 (18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 13-16 September 1988).
185. G.-L. Sun, J. Zhan, Q.-Y. Tong, S.-J. Xie, Y.-M. Cai, S.-J. Lu, J. Phys. Colloq. 49 (1988) 79 (18th European Solid State Device Research Conference (ESSDERC 88), Montpellier, France, 13-16 September 1988).
186. V.H.C. Watt, R.W. Bower, Electron. Lett. 30 (1994) 693.
187. O. Zucker, W. Langheinrich, M. Kulozik, H. Goebel, Sens. Actuators A36 (1993) 227.
188. G. Kissinger, W. Kissinger, Sens. Actuators A36 (1993) 149.
189. S.N. Farrens, J.R. Dekker, J.K. Smith, B.E. Roberds, J. Electrochem. Soc. 142 (1995) 3949.
190. R.W. Bower, F.Y.-J. Chin, Jpn. J. Appl. Phys. 36 (1997) L527.
191. G.G. Goetz, in: U. Gösele, T. Abe, J. Haisma, M. A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 65-72 (Phoenix, AZ, 13-18 October 1991).
192. J.A. Folta, C.E. Hunt, S.N. Farrens, J. Electrochem. Soc. 141 (1994) 2157.
193. G. Kräuter, A. Schumacher, U. Gösele, T. Jaworek, G. Wegner, Adv. Mater. 9 (1997) 417.
194. G. Kräuter, T. Jaworek, J. Ruhe, G. Wegner, in: U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. 97-136, Electrochemical Society, Pennington, NJ, 1998, pp. 473-480.
195. G.A.C.M. Spierings, J. Haisma, M. Michielsen, Philips J. Res. 49 (1995) 47.
196. G. Kräuter, Y. Bluhm, U. Gösele, in: L. Brehmer (Ed.), Proc. Eur. Conf. on Organised Thin Films ECOF7, University of Potsdam, Potsdam, 1998, pp. 218-219 (Potsdam, Germany, 14-18 September 1998).
197. F. Ericson, S. Johansson, J.-Å. Schweitz, Mater. Sci. Eng. A, Struct. Mater. Prop. Microstruct. Process. A105-106 (1988) 131 (3rd Int. Conf. on the Science of Hard Materials. Nassau, Bahamas, 9-13 November 1987).
198. F. Ericson, S. Johansson, J.-Å. Schweitz, Mater. Sci. Eng. A, Struct. Mater. Prop. Microstruct. Process. A105-106 (1988) 131 (3rd Int. Conf. on the Science of Hard Materials. Nassau, Bahamas, 9-13 November 1987).
199. D. Haneman, W.D. Roots, J.T.P. Grant, J. Appl. Phys. 38 (1967) 2203.
200. D. Haneman, N.S. McAlpine, E. Busch, C. Kaalund, Appl. Surf. Sci. 92 (1996) 484 (7th Int. Conf. on Solid Films and Surfaces, Hsinchu, Taiwan, 12-16 December 1994).
201. D. Haneman, N.S. McAlpine, E. Busch, C. Kaalund, Appl. Surf. Sci. 92 (1996) 484 (7th Int. Conf. on Solid Films and Surfaces, Hsinchu, Taiwan, 12-16 December 1994).
202. R. Holm, Electric Contacts: Theory and Application, 4th ed., Springer, Berlin, 1967.
203. J.S. Nelson, B.W. Dodson, P.A. Taylor, Phys. Rev. B 45(8) (1992) 4439.
204. K. Scheerschmidt, D. Conrad, U. Gösele, Comput. Mater. Sci. 7 (1996) 40 (5th Int. Workshop on Computational Modelling of the Mechanical Behaviour of Materials, Aachen, Germany, 27-29 November 1995).
205. K. Scheerschmidt, D. Conrad, U. Gösele, Comput. Mater. Sci. 7 (1996) 40 (5th Int. Workshop on Computational Modelling of the Mechanical Behaviour of Materials, Aachen, Germany, 27-29 November 1995).
206. D. Conrad, K. Scheerschmidt, U. Gösele, Appl. Phys. A, Mater. Sci. Process. A62 (1996) 7.
207. A.Y. Belov, D. Conrad, K. Scheerschmidt, U. Gösele, Philos. Mag. A 77 (1998) 55.
208. K. Scheerschmidt, D. Conrad, A. Belov, U. Gösele, Comput. Mater. Sci. 9 (1997) 108 (6th Int. Workshop on Computational Mechanics of Materials, Hamburg, Germany, 7-8 October 1996).
209. K. Scheerschmidt, D. Conrad, A. Belov, U. Gösele, Comput. Mater. Sci. 9 (1997) 108 (6th Int. Workshop on Computational Mechanics of Materials, Hamburg, Germany, 7-8 October 1996).
210. V.G. Lifshits, A.A. Saranin, A.V. Zotov, Surface Phases on Silicon: Preparation, Structure, and Properties, Wiley, Chichester, England, 1994.
211. K. Scheerschmidt, D. Conrad, U. Gösele, in preparation.
212. H. Takagi, K. Kikuchi, R. Maeda, T.R. Chung, T. Suga, Appl. Phys. Lett. 68 (1996) 2222.
213. A. Plößl, S. Mack, H. Stenzel, R. Scholz, U. Gösele, in: B. Michel, T. Winkler (Eds.), Proc. Int. Conf. on Micro Materials 1997, ddp Goldenbogen, Dresden, 1997, pp. 921-924 (Berlin, Germany, 16-18 April 1997).
214. K. Hobart, M.E. Twigg, F. Kub, C.A. Desmond, Appl. Phys. Lett. 72 (1998) 1095.
215. A. Plößl, R. Scholz, J. Bagdahn, H. Stenzel, K.N. Tu, U. Gösele, in: H.R. Huff, H. Tsuya, U. Gösele (Eds.), Proc. 8th Int. Symp. on Silicon Material Science and Technology, vol. 2, The Electrochemical Society, Pennington, NJ, 1998, pp. 1361-1372 (San Diego, CA, 4-8 May 1998).
216. T.R. Chung, L. Yang, N. Hosoda, B. Takagi, T. Suga, Appl. Surf. Sci. 117-118 (1997) 808 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
217. T.R. Chung, L. Yang, N. Hosoda, B. Takagi, T. Suga, Appl. Surf. Sci. 117-118 (1997) 808 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
218. Taek R. Chung, N. Hosoda, T. Suga, H. Takagi, Jpn. J. Appl. Phys. 37 (1998) 1405 (Solid State Devices and Materials, Hamamatsu, Japan, 16-19 September 1997).
219. Taek R. Chung, N. Hosoda, T. Suga, H. Takagi, Jpn. J. Appl. Phys. 37 (1998) 1405 (Solid State Devices and Materials, Hamamatsu, Japan, 16-19 September 1997).
220. Taek R. Chung, N. Hosoda, T. Suga, H. Takagi, Appl. Phys. Lett. 72 (1998) 1565.
221. D.J. Monsma, R. Vlutters, J.C. Lodder, Science 281 (1998) 407.
222. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, K. Scheerschmidt, Appl. Phys. Lett. 67 (1995) 3614.
223. K. Ljungberg, F. Grey, S. Bengtsson, Appl. Surf. Sci. 117-118 (1997) 813 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
224. K. Ljungberg, F. Grey, S. Bengtsson, Appl. Surf. Sci. 117-118 (1997) 813 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
225. L. Yang, N. Hosoda, T. Suga, Nucl. Instrum. Methods Phys. Res. B, Beam Interact Mater. At. 121 (1997) 519.
226. A. Plößl, R. Scholz, H. Stenzel, U. Richter, C. Schmidthals, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 417-424 (Paris, France, September 1997).
227. N. Gane, P.F. Pfaelzer, D. Tabor, Proc R. Soc. Lond. A, Math. Phys. Sci. 340 (1974) 495.
228. K.D. Hobart, C.A. Desmond, F.J. Kub, M.E. Twigg, G.G. Jernigan, in: U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, vol. 97-136, Electrochemical Society, Pennington, NJ, 1998, pp. 409-416.
229. B.B. Stefanov, K. Raghavachan, Appl. Phys. Lett. 73 (1998) 824.
230. H.I. Smith, M.S. Gussenhoven, J. Appl. Phys. (1965) 2326.
231. H. Takagi, R. Maeda, Teak Ryong Chung, T. Suga, in Tranducers 97, 1997 Int. Conf. on Solid-State Sensors and Actuators, vol. 1, IEEE, New York, NY, 1997, pp. 657-660 (Chicago, IL, 16-19 June 1997).
232. S.R. Elliott, Physics of Amorphous Materials, 2nd ed., Longman Scientific and Technical, Harlow, Essex, England, 1990, p. 53.
233. W. Bollmann, Crystal Defects and Crystalline Interfaces, Springer, Berlin, 1970.
234. A.P. Sutton, R.W. Balluffi, Interfaces in Crystalline Materials, Monographs on the Physics and Chemistry of Materials, vol. 51, Oxford University Press, Oxford, 1995.
235. H. Föll, D. Ast, Philos. Mag. A 40 (1979) 589.
236. G.C. Perreault, S.L. Hyland, D.G. Ast, Philos. Mag. A 64 (1991) 587.
237. R. Gafiteanu, S. Chevacharoenkul, U.M. Gösele, T.Y. Tan, in: A.G. Cullis, A.E. Staton-Bevan, J.L. Hutchison (Eds.), Microscopy of Semiconducting Materials 1993, Proc. Royal Microscopical Society Conference, IOP, Bristol, UK, 1993, pp. 87-90 (Oxford, UK, 5-8 April 1993).
238. M. Benamara, A. Rocher, A. Laporte, G. Sarrabayrouse, L. Lescouzères, A. PeyreLavigne, M. Fnaiech, A. Claverie, in: S. Ashok, J. Chevallier, I. Akasaki, N.M. Johnson, B.L. Sopori (Eds.), Defect and Impurity Engineered Semiconductors and Devices. Symposium, Materials Research Society, Pittsburgh, PA, 1995, pp. 863-868 (San Francisco, CA, 17-21 April 1995).
239. M. Benamara, A. Rocher, P. Sopena, A. Claverie, A. Laporte, G. Sarrabayrouse, L. Lescouzeres, A. Peyre-Lavigne, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. 42 (1996) 164 (4th Int. Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96), Escorial, Spain, 3-6 June 1996).
240. M. Benamara, A. Rocher, P. Sopena, A. Claverie, A. Laporte, G. Sarrabayrouse, L. Lescouzeres, A. Peyre-Lavigne, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. 42 (1996) 164 (4th Int. Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 96), Escorial, Spain, 3-6 June 1996).
241. S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd ed., Wiley, New York, 1994, p. 537.
242. J. Jiao, A. Berthold, M.J. Vellekoop, P.J. French, Proc. SPIE -Int. Soc. Opt. Eng. 3223 (1997) 245 (Micromachining and Microfabrication Process Technology III, Austin, TX, 29-30 September 1997).
243. J. Jiao, A. Berthold, M.J. Vellekoop, P.J. French, Proc. SPIE -Int. Soc. Opt. Eng. 3223 (1997) 245 (Micromachining and Microfabrication Process Technology III, Austin, TX, 29-30 September 1997).
244. M. Salleh Ismail, R.W. Bower, B.E. Roberds, in: Technical Digest, IEEE Solid-State Sensor and Actuator Workshop, IEEE, New York, NY, 1992, pp. 86-89 (Hilton Head Island, SC, 22-25 June 1992).
245. W.G. Easter, G.T. Jones, R.H. Shanaman, C.A. Goodwin, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 223-229 (Phoenix, AZ, 13-18 October 1991).
246. Y. Inoue, Y. Sugawara, S. Kurita, IEEE Trans. Electron Devices 42 (1995) 356.
247. K.N. Vinod, C.A. Zorman, M. Mehregany, in Tranducers 97, 1997 Int. Conf. on Solid-State Sensors and Actuators, vol. 1, IEEE, New York, NY, 1997, pp. 653-656 (Chicago, IL, 16-19 June 1997).
248. C.A. Zorman, K.N. Vinod, A. Yasseen, M. Mehregany, Mater. Sci. Forum 264-268, pt. 1 (1998) 223 (Silicon Carbide, III-Nitrides and Related Materials, 7th Int. Conf., Stockholm, Sweden, 31 August-5 September 1997).
249. C.A. Zorman, K.N. Vinod, A. Yasseen, M. Mehregany, Mater. Sci. Forum 264-268, pt. 1 (1998) 223 (Silicon Carbide, III-Nitrides and Related Materials, 7th Int. Conf., Stockholm, Sweden, 31 August-5 September 1997).
250. K.N. Vinod, C.A. Zorman, A.A. Yasseen, M. Mehregany, J. Electron. Mater. 27 (1998) L17.
251. S.K. Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd ed., Wiley, New York, 1994, p. 528.
252. Y. Arimoto, H. Horie, N. Higaki, M. Kojima, F. Sugimoto, T. Ito, J. Electrochem. Soc. 140 (1993) 1138.
253. A.F. Holleman, E. Wiberg, Lehrbuch der anorganischen Chemie (in German), Walter de Gruyter, Berlin, Germany, 90th ed., 1976.
254. J.K. Vondeling, J. Mater. Sci. 18 (1983) 304.
255. J.S. Danel, G. Delapierre, J. Micromech. Microeng. 1 (1991) 187.
256. P. Rangsten, Ö. Vallin, K. Hermansson, Y. Bäcklund, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 187-192.
257. K. Eda, T. Ogura, Y. Tomita, Y. Taguchi, in: M. Levy, S.C. Schneider, B.R. McAvoy (Eds.), 1994 IEEE Ultrasonics Symposium, vol. 2, Proceedings, IEEE, New York, NY, 1994, pp. 1045-1049 (Cannes, France, 1-4 November 1994).
258. K. Eda, A. Kanaboshi, T. Ogura, Y. Taguchi, J. Appl. Phys. 74 (1993) 4801.
259. X.-L. Xu, J. Zhan, Q.-Y. Tong, Electron. Lett. 24 (1988) 691.
260. T. Abe, K. Sunagawa, A. Uchiyama, K. Yoshizawa, Y. Nakazato, Jpn. J. Appl. Phys. 32 (1993) 334.
261. Q.-Y. Tong, U. Gösele, T. Martini, M. Reiche, Sens. Actuators A48 (1995) 117.
262. Q.-Y. Tong, R. Scholz, U. Gösele, T.-H. Lee, L.-J. Huang, T.-L. Chao, T.Y. Tan, Appl. Phys. Lett. 72 (1998) 49.
263. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 597.
264. F. Pigeon, B. Biasse, M. Zussy, Electron. Lett. 31 (1995) 792.
265. D. Ando, K. Oishi, T. Nakamura, S. Umeda, in: Proc. IEEE, The 10th Annual International Workshop on Micro Electro Mechanical Systems, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots, IEEE, New York, NY, 1997, pp. 186-190 (Nagoya, Japan, 26-30 January 1997).
266. S. Farrens, J. Smith, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 72-77 (Reno, NV, 21-26 May 1995).
267. H.Y. Wang, R.S. Foote, S.C. Jacobson, J.H. Schneibel, J.M. Ramsey, Sens. Actuators B45 (1997) 199.
268. J. Haisma, J.J.C. Groenen, P.W. de Haas, Philips J. Res. 49 (1995) 151.
269. Z.L. Liau, Phys. Rev. B 55(19) (1997) 12899.
270. G. Patriarche, F. Jeannes, J.-L. Oudar, F. Glas, J. Appl. Phys. 82 (1997) 4892.
271. T.L. Chu, R.K. Smeltzer, J. Electrochem. Soc. 120 (1973) 846.
272. A. Yamada, M. Oasa, H. Nagabuchi, M. Kawashima, Mater. Lett. 6 (1988) 167.
273. K. Hjort, F. Ericson, J.Å. Schweitz, C. Hallin, E. Janzen, J. Electrochem. Soc. 141 (1994) 3242.
274. T. Takamori, H. Wada, T. Kamijoh, Appl. Surf. Sci. 117-118 (1997) 798 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
275. T. Takamori, H. Wada, T. Kamijoh, Appl. Surf. Sci. 117-118 (1997) 798 (2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa, Japan, 28 October-1 November 1996).
276. D. Zheng, L.A. Gordon, Y.S. Wu, R.K. Route, M.M. Fejer, R.L. Byer, R.S. Feigelson, J. Electrochem. Soc. 144 (1997) 1439.
277. D. Zheng, L.A. Gordon, R.C. Eckardt, M.M. Fejer, R.L. Byer, in: F. Ren, S.J. Pearton, S.N.G. Chu, R.J. Shul, W. Pletschen, T. Kamijoh (Eds.), Proc. 24th State-Of-The-Art-Program on Compound Semiconductors, Electrochemical Society, Pennington, NJ, 1996, pp. 175-180 (Los Angeles, CA, 5-10 May 1996).
278. Y.S. Wu, R.S. Feigelson, R.K. Route, D. Zheng, L.A. Gordon, M.M. Fejer, R.L. Byer, J. Electrochem. Soc. 145 (1998) 366.
279. Y.S. Wu, R.S. Feigelson, R.K. Route, D. Zheng, L.A. Gordon, M.M. Fejer, R.L. Byer, J. Appl. Phys. 83 (1998) 5552.
280. G. Kästner, R. Scholz, personal communication, 1998.
281. J.F. Klem, E.D. Jones, D.R. Myers, J.A. Lott, J. Appl. Phys. 66 (1989) 459.
282. M.E. Grupen-Shemansky, G.W. Hawkins, H.M. Liaw, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 132-145 (Phoenix, AZ, 13-18 October 1991).
283. A. Ersen, I. Schnitzer, E. Yablonovitch, T. Gmitter, Solid-State Electron. 36 (1993) 1731.
284. T.R. Chung, L. Yang, N. Hosoda, T. Suga, Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. 121 (1997) 203 (Materials Synthesis and Modification by Ion and/or Laser Beams. Joint International Symposium of the '96 MRS-J Conference (Symposium N) and the 3rd Ion Engineering Conference, Chiba, Japan, 23-24 May 1996).
285. T.R. Chung, L. Yang, N. Hosoda, T. Suga, Nucl. Instrum. Methods Phys. Res. B, Beam Interact. Mater. At. 121 (1997) 203 (Materials Synthesis and Modification by Ion and/or Laser Beams. Joint International Symposium of the '96 MRS-J Conference (Symposium N) and the 3rd Ion Engineering Conference, Chiba, Japan, 23-24 May 1996).
286. E. Jalaguier, B. Aspar, S. Pocas, J.F. Michaud, M. Zussy, A.M. Papon, M. Bruel, Electron. Lett. 34 (1998) 408.
287. F.A. Kish, F.M. Steranka, D.C. DeFevere, D.A. Vanderwater, K.G. Park, C.P. Kuo, T.D. Osentowski, M.J. Peanasky, J.G. Yu, R.M. Fletcher, D.A. Steigerwald, M.G. Craford, V.M. Robbins, Appl. Phys. Lett. 64 (1994) 2839.
288. F.A. Kish, D.A. DeFevere, D.A. Vanderwater, G.R. Trott, R.J. Weiss, J.S. Major, Jr., Electron. Lett. 30 (1994) 1790.
289. Shoon-Jinn Chang, Jinn-Kong Sheu, Yan-Kuin Su, Ming-Jiunn Jou, Gou-Chung Chi, Jpn. J. Appl. Phys. 35 (1996) 4199.
290. G.E. Höfler, D.A. Vanderwater, D.C. DeFevere, F.A. Kish, M.D. Camras, F.M. Steranka, I.-H. Tan, Appl. Phys. Lett. 69 (1996) 803.
291. D.A. Vanderwater, I.-H. Tan, G.E. Höfler, D.C. Defevere, F.A. Kish, Proc. IEEE 85 (1997) 1752.
292. Y.H. Lo, R. Bhat, D.M. Hwang, M.A. Koza, T.P. Lee, Appl. Phys. Lett. 58 (1991) 1961.
293. R.J. Ram, L. Yang, K. Nauka, Y.M. Houng, M. Ludowise, D.E. Mars, J.J. Dudley, S.Y. Wang, Appl. Phys. Lett. 62 (1993) 2474.
294. R.J. Ram, J.J. Dudley, J.E. Bowers, L. Yang, K. Carey, S.J. Rosner, K. Nauka, J. Appl. Phys. 78 (1995) 4227.
295. Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki, M. Kondow, Appl. Phys. Lett. 66 (1995) 451.
296. Y. Okuno, M. Aoki, T. Tsuchiya, K. Uomi, Appl. Phys. Lett. 67 (1995) 810.
297. Y. Okuno, Appl. Phys. Lett. 68 (1996) 2855.
298. F. Salomonsson, K. Streubel, J. Bentell, M. Hammar, D. Keiper, R. Westphalen, J. Piprek, L. Sagalowicz, A. Rudra, J. Behrend, J. Appl. Phys. 83 (1998) 768.
299. G. Patriarche, F. Jeannes, F. Glas, J.L. Oudar, in: A.G. Cullis, A.E. Staton-Bevan (Eds.), Microscopy of Semiconducting Materials 1995, Proceedings, IOP Publishing, Bristol, UK, 1995, pp. 409-412 (Oxford, UK, 20-23 March 1995).
300. G. Kästner, P. Kopperschmidt, D. Hesse, M. Lorenz, U. Gösele, in: H. Rogalla, D.H.A. Blank (Eds.), Applied Superconductivity 1997, vol. 1, Proc. of EUCAS 1997 3rd Eur. Conf. on Applied Superconductivity, Institute of Physics Publishing, Bristol, UK, 1997, pp. 173-176 (Koningshof, Netherlands, 30 June-3 July 1997).
301. G. Kästner, P. Kopperschmidt, D. Hesse, U. Gösele, in H. Koch, S. Knappe (Eds.), Extended Abstracts, (Physikalisch-Technische Bundesanstalt, Braunschweig, 1997), vol. pp. 52-54 (6th International Superconducting Electronics Conference, Berlin, 25-28 June 1997).
302. G. Kästner, P. Kopperschmidt, D. Hesse, U. Gösele, in H. Koch, S. Knappe (Eds.), Extended Abstracts, (Physikalisch-Technische Bundesanstalt, Braunschweig, 1997), vol. pp. 52-54 (6th International Superconducting Electronics Conference, Berlin, 25-28 June 1997).
303. G.P. Imthurn, G.A. Garcia, H.W. Walker, L. Forbes, J. Appl. Phys. 72 (1992) 2526.
304. T. Abe, K. Ohki, A. Uchiyama, K. Nakazawa, Y. Nakazato, Jpn. J. Appl. Phys. 33(Suppl. 1B) (1994) 514.
305. J.H. Wang, M.S. Jin, V.H. Ozguz, S.H. Lee, Appl. Phys. Lett. 64 (1994) 724.
306. P. Kopperschmidt, G. Kästner, D. Hesse, N.D. Zakharov, U. Gösele, Appl. Phys. Lett. 70 (1997) 2972.
307. P. Kopperschmidt, G. Kästner, S. Senz, D. Hesse, U. Gösele, Appl. Phys. A Mater. Sci. Process. A64 (1997) 533.
308. St. Senz, P. Kopperschmidt, G. Kästner, D. Hesse, J. Mater. Sci. 33 (1998) 2073.
309. Q.-Y. Tong, U. Gösele, C. Yuan, A.J. Steckl, M. Reiche, J. Electrochem. Soc. 142 (1995) 232.
310. L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, M. Bruel, Electron. Lett. 32 (1996) 1144.
311. Q.-Y. Tong, T.-H. Lee, P. Werner, U. Gösele, R.B. Bergmann, J.H. Werner, J. Electrochem. Soc. 144 (1997) L111.
312. Q.-Y. Tong, T.-H. Lee, L.-J. Huang, Y.-L. Chao, U. Gösele, Electron. Lett. 34 (1998) 407.
313. Y. Tomita, M. Sugimoto, K. Eda, T. Okano, Jpn. J. Appl. Phys. 33 (1994) L1542.
314. Y. Tomita, M. Sugimoto, K. Eda, Appl. Phys. Lett. 66 (1995) 1484.
315. K. Eda, M. Sugimoto, Y. Tomita, Appl. Phys. Lett. 66 (1995) 827.
316. A. Namba, M. Sugimoto, T. Ogura, Y. Tomita, K. Eda, Appl. Phys. Lett. 67 (1995) 3275.
317. M. Alexe, G. Kästner, D. Hesse, U. Gösele, Appl. Phys. Lett. 70 (1997) 3416.
318. M. Alexe, S. Senz, A. Pignolet, J.F. Scott, D. Hesse, U. Gösele, in: Materials Research Society Symposium Proceedings, 493: Ferroelectric Thin Films VI, Materials Research Society, 1998, pp. 517-522.
319. M. Totoki, T. Mizumoto, K. Maru, Y Naito, Electron. Lett. 30 (1994) 1534.
320. M. Totoki, T. Mizumoto, T. Nakamura, K. Maru, Y. Naito, Jpn. J. Appl. Phys. 34 (1995) 510.
321. H. Yokoi, T. Mizumoto, K. Maru, N. Fuke, Y. Naito, Jpn. J. Appl. Phys. 35 (1996) 4138.
322. H. Yokoi, T. Mizumoto, K. Maru, Y. Naito, Jpn. J. Appl. Phys. 36 (1997) 2784.
323. H. Yokoi, T. Mizumoto, K. Maru, Y. Naito, Electron. Lett. 31 (1995) 1612.
324. T. Sugino, T. Itagaki, J. Shirafuji, Diam. Relat. Mater. 5 (1996) 714 (6th Eur. Conf. on Diamond, Diamond-like and Related Materials (Diamond Films'95), Barcelona, Spain, 10-15 September 1995).
325. T. Sugino, T. Itagaki, J. Shirafuji, Diam. Relat. Mater. 5 (1996) 714 (6th Eur. Conf. on Diamond, Diamond-like and Related Materials (Diamond Films'95), Barcelona, Spain, 10-15 September 1995).
326. T. Sugino, T. Itagaki, J. Shirafuji, Electron. Lett. 32 (1996) 71.
327. Q.-Y. Tong, C.B. Eom, U. Gösele, A.F. Hebard, J. Electrochem. Soc. 141 (1994) L137.
328. T. Feng, Q.-Y. Tong, J. Askinazi, U.M. Gösele, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, July 1995, pp. 597-604 (Reno, NV, 21-26 May 1995).
329. G.A.C.M. Spierings, J. Haisma, F.J.H.M. van der Kruis, Philips J. Res. 49 (1995) 139.
330. G.A.C.M. Spierings, J. Haisma, Appl. Phys. Lett. 64 (1994) 3246.
331. R.F. Wolffenbuttel, K.D. Wise, Sens. Actuators A43 (1994) 223 (7th Int. Conf. on Solid State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June 1993).
332. R.F. Wolffenbuttel, K.D. Wise, Sens. Actuators A43 (1994) 223 (7th Int. Conf. on Solid State Sensors and Actuators (Transducers '93), Yokohama, Japan, 7-10 June 1993).
333. D. Nayak, A. Reisman, I. Turlik, J. Electrochem. Soc. 135 (1988) 1023.
334. A. Fukuroda, T. Sugii, Y. Arimoto, T. Ito, Jpn. J. Appl. Phys. 30 (1991) L1693.
335. L.A. Field, R.S. Muller, Sens. Actuators A 21-23 (1990) 935.
336. R. Sawada, J. Watanabe, H. Nakada, K. Koyabu, J. Electrochem. Soc. 138 (1991) 184.
337. R. Legtenberg, S. Bouwstra, M. Elwenspoek, J. Micromech. Microeng. 1 (1991) 157.
338. H.J. Quenzer, W. Benecke, Sens. Actuators A32 (1992) 340 (EUROSENSORS V Conference, Rome, Italy, 30 September-2 October 1991).
339. R. Puers, A. Cozma, J. Micromech. Microeng. 7 (1997) 114 (Seventh Workshop on Micromachining, Micromechanics and Microsystems in Europe, MME '96, Barcelona, Spain, 21-22 October 1996).
340. R. Puers, A. Cozma, J. Micromech. Microeng. 7 (1997) 114 (Seventh Workshop on Micromachining, Micromechanics and Microsystems in Europe, MME '96, Barcelona, Spain, 21-22 October 1996).
341. K.J.D. Mackenzie, I.W.M. Brown, P. Ranchod, R.H. Meinhold, J. Mater. Sci. 26 (1991) 763.
342. K.J.D. Mackenzie, I.W.M. Brown, P. Ranchod, J. Mater. Sci. 26 (1991) 769.
343. H. Moissan, F. Siemens, Chem. Ber. 37 (1904) 2395 (in German).
344. W.P. Eaton, S.H. Risbud, R.L. Smith, Appl. Phys. Lett. 65 (1994) 439.
345. C. den Besten, R.E.G. van Hal, J. Munoz, P. Bergveld, in: W Benecke, H.-C. Petzold (Eds.), Proceedings, IEEE Micro Electro Mechanical Systems, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (Cat. No.92CH3093-2), IEEE, New York, NY, 1992, pp. 104-109 (Travemünde, Germany, 4-7 February 1992).
346. V. Srikant, D.R. Clarke, P.V. Evans, Appl. Phys. Lett. 69 (1996) 1755.
347. V. Srikant, D.K. Clarke, J. Appl. Phys. 83 (1998) 5515.
348. R.P. Joshi, R.F. Wood, J. Appl. Phys. 83 (1998) 5543.
349. R.P. Joshi, R.F. Wood, J. Appl. Phys. 84 (1998) 3197.
350. W.S. Yang, K.Y. Ahn, B.P.R. Marioton, R. Stengl, U. Gösele, Jpn. J. Appl. Phys. 28 (1989) L721.
351. G. Tam, F.S. d'Aragona, N.D. Theodore, in: S.P. Murarka, K. Rose, T. Ohmi, T. Seidel (Eds.), Interface Control of Electrical, Chemical, and Mechanical Properties, vol. 318, Symposium, Materials Research Society, Pittsburgh, PA, 1994, pp. 299-304 (Boston, MA, 29 November-3 December 1993).
352. Q.-Y. Tong, S. Hsia, U. Gösele, H. Zimmermann, M. Reiche, Mater. Chem. Phys. 45 (1996) 223.
353. G. Kissinger, G. Morgenstern, H. Richter, J. Appl. Phys. 74 (1993) 6576.
354. F.P. Widdershoven, J. Haisma, J.P.M. Naus, J. Appl. Phys. 68 (1990) 6253.
355. A. Casel, E. Kasper, H. Kibbel, E. Sasse, J. Vacuum Sci. Technol. B (Microelectronics Processing and Phenomena) 5 (1987) 1650.
356. E. Kasper, M. Bauer, M. Oehme, Thin Solid Films 321 (1998) 148.
357. T.R. Fogg, R.A. Duce, J.L. Fasching, Anal. Chem. 55 (1983) 2179.
358. F.A. Stevie, E.P. Martin Jr., P.M. Kahora, J.T. Cargo, A.K. Nanda, A.S. Harms, A.J. Muller, H.W. Krautter, J. Vac. Sci. Technol. A 9 (1991) 2813 (Topical Conference on the Processed Induced Particulate Contamination. Toronto, Ont., Canada, 8 October 1990).
359. F.A. Stevie, E.P. Martin Jr., P.M. Kahora, J.T. Cargo, A.K. Nanda, A.S. Harms, A.J. Muller, H.W. Krautter, J. Vac. Sci. Technol. A 9 (1991) 2813 (Topical Conference on the Processed Induced Particulate Contamination. Toronto, Ont., Canada, 8 October 1990).
360. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 190.
361. R.K. Iler, The Chemistry of Silica, Wiley, New York, 1979, p. 410.
362. D.L. Hughes, in: M.A. Schmidt, T. Abe, C.E. Hunt, H. Baumgart (Eds.), Proc. 2nd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1993, pp. 17-31.
363. K. Miki, K. Sakamoto, T.T. Sakamoto, Surf. Sci. 406 (1998) 312.
364. K. Mitani, H.Z. Massoud, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 355-364. (Phoenix, AZ, 13-18 October 1991).
365. A. Jauhiainen, S. Bengtsson, O. Engström, Microelectron. Eng. 19 (1992) 597 (ESSDERC '92 - 1992 22nd European Solid State Device Research Conference, Leuven, Belgium, 14-17 September 1992).
366. A. Jauhiainen, S. Bengtsson, O. Engström, Microelectron. Eng. 19 (1992) 597 (ESSDERC '92 - 1992 22nd European Solid State Device Research Conference, Leuven, Belgium, 14-17 September 1992).
367. K. Mitani, H.Z. Massoud, IEICE Trans. Electron. E75-C (1992) 1421.
368. P. Ericsson, S. Bengtsson, U. Södervall, J. Appl. Phys. 78 (1995) 3472.
369. P.T. Bailey, G. Jin, B.M. Armstrong, H.S. Gamble, in: C.E. Hunt, H. Baumgart, S.S. Iyer, T. Abe, U. Gösele (Eds.), Proc. 3rd Int. Symp. on Semiconductor Wafer Bonding: Physics and Applications, Electrochemical Society, Pennington, NJ, 1995, pp. 252-266 (Reno, NV, 21-26 May 1995).
370. V.V. Afanas'ev, P. Ericsson, S. Bengtsson, M.O. Andersson, Appl. Phys. Lett. 66 (1995) 1653.
371. K. Furukawa, M. Shimbo, K. Fukuda, K. Tanzawa, in: Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Bus. Center Acad. Socs. Japan, Tokyo, Japan, 1986), pp. 533-536 (Tokyo, Japan, 20-22 August 1986).
372. C.A. Desmond, K. Hobart, F. Kub, G. Campisi, M. Weldon, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 459-472 (Paris, France, 1997).
373. K. Ljungberg, A. Söderbärg, S. Bengtsson, A. Jauhiainen, J. Electrochem. Soc. 141 (1994) 562.
374. F. Kub, K. Hobart, C.A. Desmond, in U. Gösele, H. Baumgart, T. Abe, C.E. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, Electrochemical Society, Pennington, NJ, 1998, vol. 97-36, pp. 466-472.
375. J. Vedde, K. Rasmussen, P. Viscor, C. Caraglia, M. Benamara, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 341-348.
376. I.V. Grekhov, T.S. Argunova, M.Y. Gutkin, L.S. Kostina, T.V. Kudryavtzeva, Mater. Sci. Forum 196-201, pt. 4 (1995) 1853 (18th Int. Conf. on Defects in Semiconductors, ICDS-18, Sendai, Japan, 23-28 July 1995).
377. I.V. Grekhov, T.S. Argunova, M.Y. Gutkin, L.S. Kostina, T.V. Kudryavtzeva, Mater. Sci. Forum 196-201, pt. 4 (1995) 1853 (18th Int. Conf. on Defects in Semiconductors, ICDS-18, Sendai, Japan, 23-28 July 1995).
378. E.D. Kim, N.K. Kim, S.C. Kim, I.V. Grekhov, T.V. Argunova, L.S. Kostina, T.V Kudryavtseva, Electron. Lett. 31 (1995) 2047.
379. T.S. Argunova, I.V. Grekhov, M.Y. Gutkin, L.S. Kostina, E.N. Belyakova, T.V. Kudryavtseva, E.D. Kim, D.M. Park, Phys. Solid State 38 (1996) 1832.
380. E.D. Kim, S.C. Kim, J.M. Park, I.V. Grekhov, T.S. Argunova, L.S. Kostina, T.V. Kudryavtzeva, J. Electrochem. Soc. 144 (1997) 622.
381. O. Engström, S. Bengtsson, G.I. Andersson, M.O. Andersson, A. Jauhiainen, J. Electrochem. Soc. 139 (1992) 3638.
382. I.V. Grekhov, L.S. Kostina, T.S. Argunova, E.D. Kim, S.C. Kim, J.M. Park, 1997, pp. 2.087-2.092 (EPE 1997, Trondheim).
383. H. Wada, Y. Ogawa, T. Kamijoh, Appl. Phys. Lett. 62 (1993) 738.
384. D.A. Vanderwater, F.A. Kish, M.J. Peansky, S.J. Rosner, J. Cryst. Growth 174 (1997) 213 (American Crystal Growth 1996 and Vapor Growth and Epitaxy 1996, 10th Am. Conf. on Crystal Growth and the 9th Int. Conf. on Vapor Growth and Epitaxy, Vail, CO, 4-9 August 1996).
385. D.A. Vanderwater, F.A. Kish, M.J. Peansky, S.J. Rosner, J. Cryst. Growth 174 (1997) 213 (American Crystal Growth 1996 and Vapor Growth and Epitaxy 1996, 10th Am. Conf. on Crystal Growth and the 9th Int. Conf. on Vapor Growth and Epitaxy, Vail, CO, 4-9 August 1996).
386. F.A. Kish, D.A. Vanderwater, M.J. Peanasky, M.J. Ludowise, S.G. Hummel, S.J. Rosner, Appl. Phys. Lett. 67 (1995) 2060.
387. J.-P. Colinge, Silicon-on-insulator: Materials to VLSI, 1st ed., Kluwer Academic Publishers, Boston, MA, 1991.
388. P.B. Mumola, G.J. Gardopee, T. Feng, A.M. Ledger, P.J. Clapis, P.E. Miller, in: M.A. Schmidt, T. Abe, C.E. Hunt, H. Baumgart (Eds.), Proc. 2nd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1993, pp. 410-422 (Hawaii, 16-21 May 1993).
389. K. Mitani, M. Nakano, T. Abe, IEICE Trans. Electron. E80-C (1997) 370.
390. D.J. Godbey, M.E. Twigg, H.L. Hughes, L.J. Palkuti, P. Leonov, J.J. Wang, J. Electrochem. Soc. 137 (1990) 3219.
391. V. Lehmann, K. Mitani, D. Feijóo, U. Gösele, J. Electrochem. Soc. 138 (1991) L3.
392. D. Godbey, A. Krist, H. Hughes, P. Thompson, P. Leonov, E. King, J. Wang, L. Palkuti, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 174-179 (Phoenix, AZ, 13-18 October 1991).
393. A. Söderbärg, J. Electrochem. Soc. 139 (1992) 561.
394. S.S. Iyer, P.M. Pitner, M.J. Tejwani, T.O. Sedgwick, in: M.A. Schmidt, T. Abe, C.E. Hunt, H. Baumgart (Eds.), Proc. 2nd Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1993, pp. 3-16 (Hawaii, 16-21 May 1993).
395. T. Yonehara, K. Sakaguchi, N. Sato, Appl. Phys. Lett. 64 (1994) 2108.
396. N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, T. Yonehara, J. Electrochem. Soc. 142 (1995) 3116.
397. N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, J. Nakayama, T. Yonehara, Jpn. J. Appl. Phys. 35 (1996) 973.
398. K. Sakaguchi, N. Sato, K. Yamagata, T. Atoji, Y. Fujiyama, J. Nakayama, T. Yonehara, IEICE Trans. Electron. E80-C (1997) 378.
399. M. Bruel, Electron. Lett. 31 (1995) 1201.
400. M. Bruel, Nucl. Instrum. Methods Phys. Res. B, Beam Interact Mater. At. 108 (1996) 313.
401. A.J. Auberton-Hervé, T. Barge, F. Metral, M. Bruel, B. Aspar, H. Moriceau, in: H.R. Huff, H. Tsuya, U. Gösele (Eds.), Proc. 8th Int. Symp. on Silicon Materials Science and Technology, vol. 2, The Electrochemical Society, Pennington, NJ, 1998, pp. 1341-1360.
402. 1998 IEEE International SOI Conference (1998).
403. J.F. Conley Jr., P.M. Lenahan, B.D. Wallace, IEEE Trans. Nucl. Sci. 43 (1996) 2635 (1996 IEEE Nuclear and Space Radiation Effects Conference).
404. R.E. Stahlbush, IEEE Trans. Nucl. Sci. 44 (1997) 2106 (1997 IEEE Nuclear and Space Radiation Effects Conference (NSREC'97), Snowmass Village, CO, 21-25 July 1997).
405. R.E. Stahlbush, IEEE Trans. Nucl. Sci. 44 (1997) 2106 (1997 IEEE Nuclear and Space Radiation Effects Conference (NSREC'97), Snowmass Village, CO, 21-25 July 1997).
406. O. Gruber, P. Paillet, C. Marcandella, B. Aspar, A.J. Auberton-Hervé, IEEE Trans. Nucl. Sci. 45 (1998) 1402 (4th Eur. Conf. on Radiation and Its Effects on Components and Systems).
407. J. Jomaah, E. Rauly, G. Ghibaudo, F. Balestra, J. de Physique IV 8(P3) (1998) 17.
408. J. Itoh, Y. Tohma, T. Inoue, H. Yokoyama and K. Shimizu, Jpn. J. Appl. Phys. 33 (1994) 7167 (1994 7th Int. Microprocess Conf., Hsinchu, Taiwan, 11-14 July 1994).
409. J. Itoh, Y. Tohma, T. Inoue, H. Yokoyama and K. Shimizu, Jpn. J. Appl. Phys. 33 (1994) 7167 (1994 7th Int. Microprocess Conf., Hsinchu, Taiwan, 11-14 July 1994).
410. R.P. Ried, J. Mamin, B.D. Terris, L.S. Fan, D. Rugar, J. Microelectromech. Syst. 6 (1997) 294.
411. R. Frank, M.L. Kniffin, L. Ristic, in: L. Ristic (Ed.), Sensor Technology and Devices, Artec House, Boston, 1994, pp. 203-238.
412. T. Gessner, M. Wiemer, K. Hiller, M. Hafen, in: D. Denton, P.J. Hesketh, H. Hughes (Eds.), Proc. 2nd Int. Symp. on Microstructures and Microfabricated Systems, Electrochemical Society, Pennington, NJ, 1995, pp. 297-308 (Chicago, IL, 8-13 October 1995).
413. M.A. Schmidt, Proc. IEEE 86 (1998) 1575.
414. S. Mack, H. Baumann, U. Gösele, in: Proc. IEEE, The 10th Annu. Int. Workshop on Micro Electro Mechanical Systems, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots, IEEE, New York, NY, 1997, pp. 488-493 (Nagoya, Japan, 26-30 January 1997).
415. A. Bindra, Electronic Design 46(11) (1998) 41.
416. A. Nakagawa, K. Watanabe, Y. Yamaguchi, H. Ohashi, K. Furukawa, in: International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), IEEE, New York, NY, 1986, pp. 122-125 (Los Angeles, CA, 7-10 December 1986).
417. K. Furukawa, A. Nakagawa, Appl. Surf. Sci. 41-42 (1989) 627 (ICFSI-2, 2nd Int. Conf. on the Formation of Semiconductor Interfaces, Takarazuka, Japan, 8-12 November 1988).
418. K. Furukawa, A. Nakagawa, Appl. Surf. Sci. 41-42 (1989) 627 (ICFSI-2, 2nd Int. Conf. on the Formation of Semiconductor Interfaces, Takarazuka, Japan, 8-12 November 1988).
419. I.V. Grekhov, L.S. Kostina, E.I. Belakova, I.A. Rolnik, in: W. Fichtner, A.A. Jaecklin, D. Aemmer (Eds.), Proc. 6th Int. Symp. on Power Semiconductor Devices and ICs. ISPSD '94, Hartung-Gorre Verlag, Konstanz, Germany, 1994, pp. 233-236 (Davos, Switzerland, 31 May-2 June 1994).
420. E. Monta, C. Okada, S. Sabai, Y. Saito, in: Proc. 7th Int. Symp. on Power Semiconductor Devices and ICs, ISPSD '95, (Inst. Electr. Eng. Jpn, Tokyo, Japan, 1995), pp. 212-217 (Yokohama, Japan, 23-25 May 1995).
421. F.A. Kish, D.A. Vanderwater, D.C. DeFevere, D.A. Steigerwald, G.E. Hofler, K.G. Park, F.M. Steranka, Electron. Lett. 32 (1996) 132.
422. C.H. Chen, S.A. Stockman, M.J. Peanasky, C.P. Kuo, in: G.B. Stringfellow, E. Craford (Eds.), Semiconductor and Semimetals, 48: High Brightness Light Emitting Diodes, Academic Press, New York, 1997, pp. 97-148.
423. F.A. Kish, R.M. Fletcher, in: G.B. Stringfellow, M.G. Craford (Eds.), Semiconductor and Semimetals, 48: High Brightness Light Emitting Diodes, Academic Press, San Diego, 1997, pp. 149-226.
424. R. DeJule, Semicond. Int. (October 1997) 78.
425. J.J. Dudley, D.I. Babic, R. Mirin, L. Yang, B.I. Miller, R.J. Ram, T. Reynolds, E.L. Hu, J.E. Bowers, Appl. Phys. Lett. 64 (1994) 1463.
426. Y. Qian, Z.H. Zhu, Y.H. Lo, D.L. Huffaker, D.G. Deppe, H.Q. Hou, B.E. Hammons, W. Lin, Y.K. Tu, Appl. Phys. Lett. 71 (1997) 25.
427. Y. Ohiso, C. Amano, Y. Itoh, K. Tateno, T. Tadokoro, H. Takenouchi, T. Kurokawa, Electron. Lett. 32 (1996) 1483.
428. S.J.B. Yoo, R. Bhat, C. Caneau, M.A. Koza, Appl. Phys. Lett. 66 (1995) 3410.
429. N. Yamamoto, S. Noda, A. Sasaki, Jpn. J. Appl. Phys. 36 (1997) 1907 (1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), Yokohama, Japan, 26-29 August 1996).
430. N. Yamamoto, S. Noda, A. Sasaki, Jpn. J. Appl. Phys. 36 (1997) 1907 (1996 Int. Conf. on Solid State Devices and Materials (SSDM'96), Yokohama, Japan, 26-29 August 1996).
431. N. Yamamoto, S. Noda, Jpn. J. Appl. Phys. 37 (1998) 3334.
432. L.B. Freund, Appl. Phys. Lett. 70 (1997) 3519.
433. T.-H. Lee, Q.-Y. Tong, Y.-L. Chao, L.-J. Huang, U. Gösele, in: S. Cristoloveanu (Ed.), Proc. 8th Int. Symp. on Silicon-on-Insulator Technology and Devices, Electrochemical Society, Pennington, NJ, 1997, pp. 27-32 (Paris, France, 31 August-5 September 1997).
434. R.W. Bower, L. LeBoeuf, Y.A. Li, Nuovo Cimento D 19D (1997) 1871.
435. A. Agarwal, T.E. Haynes, V.C. Venezia, O.W. Holland, D.J. Eaglesham, Appl. Phys. Lett. 72 (1998) 1086.
436. U. Gösele, personal communication, 1998.
437. Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, T.-H. Lee, Appl. Phys. Lett. 70 (1997) 1390.
438. L. Di Cioccio, F. Letertre, Y. Le Tiec, A.M. Papon, C. Jaussaud, M. Bruel, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. B46 (1997) 349 (E-MRS 96 Spring Meeting, Symposium A: High Temperature Electronics: Materials, Devices and Applications, Strasbourg, France, 4-7 June 1996).
439. L. Di Cioccio, F. Letertre, Y. Le Tiec, A.M. Papon, C. Jaussaud, M. Bruel, Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. B46 (1997) 349 (E-MRS 96 Spring Meeting, Symposium A: High Temperature Electronics: Materials, Devices and Applications, Strasbourg, France, 4-7 June 1996).
440. L. Di Cioccio, Y. Le Tiec, C. Jaussaud, E. Hugonnard-Bruyère, M. Bruel, Mater. Sci. Forum 264-268, pt.2 (1998) 765 (Silicon Carbide, III-Nitrides and Related Materials, 7th Int. Conf., Stockholm, Sweden, 31 August-5 September 1997).
441. L. Di Cioccio, Y. Le Tiec, C. Jaussaud, E. Hugonnard-Bruyère, M. Bruel, Mater. Sci. Forum 264-268, pt.2 (1998) 765 (Silicon Carbide, III-Nitrides and Related Materials, 7th Int. Conf., Stockholm, Sweden, 31 August-5 September 1997).
442. K.J. Budde, W.J. Holzapfel, in: U. Gösele, T. Abe, J. Haisma, M.A. Schmidt (Eds.), Proc. 1st Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society, Pennnington, NJ, 1992, pp. 271-286 (Phoenix, AZ, 13-18 October 1991).
443. V Lehmann, U. Gösele, K. Mitani, Solid State Technol. 33 (1990) 91.
444. Q.-Y. Tong, R. Gafiteanu, U. Gösele, Jpn. J. Appl. Phys. 31 (1992) 3483.
445. Q.-Y. Tong, R. Gafiteanu, U. Gösele, J. Electrochem. Soc. 139 (1992) L101.
446. K. Gutjahr, T. Martini, U. Gösele, in: U. Gösele, H. Baumgart, T. Abe, C. Hunt, S. Iyer (Eds.), Proc. 4th Int. Symp. on Semiconductor Wafer Bonding: Science, Technology, and Applications, The Electrochemical Society, Pennington, NJ, 1998, pp. 72-78 (Paris, France, September 1997).
447. F. Grey, K. Hermansson, Appl. Phys. Lett. 71 (1997) 3400.
448. T. Suga, Journal of the Society of Hybrid Microelectronics 12(6) (1996) 21 (in Japanese; see also http:// www.su.rcast.u-tokyo.ac.jp).
449. N. Hosoda, L. Yang, T. Suga, in: Interface Science and Materials Interconnection Proceedings of the 8th Japan Institute of Metals International Symposium, The Japan Institute of Metals 1996, pp. 201-204 (Toyama, Japan, 1-4 July 1996).
450. N. Hosoda, in: Proc. 3rd Int. Conf. on Ecomaterials, 1997, pp. 383-386 (Tsukuba, Japan, 10-12 September 1997).
451. D.J. Monsma, J.C. Lodder, T.J.A. Popma, B. Dieny, Phys. Rev. Lett. 74 (1995) 5260.
452. D.J. Monsma, R. Vlutters, T. Shimatsu, E.G. Keim, R.H. Mollema, J.C. Lodder, IEEE Trans. Magn. 33 (1997) 3495 (1997 IEEE International Magnetics Conference (INTERMAG '97), New Orleans, LA, 1-4 April 1997).
453. D.J. Monsma, R. Vlutters, T. Shimatsu, E.G. Keim, R.H. Mollema, J.C. Lodder, IEEE Trans. Magn. 33 (1997) 3495 (1997 IEEE International Magnetics Conference (INTERMAG '97), New Orleans, LA, 1-4 April 1997).
454. D. Teng, Y.H. Lo, Appl. Phys. Lett. 62 (1993) 43.
455. J. Woltersdorf, E. Pippel, Thin Solid Films 116 (1984) 77 (Second International Summer School on Thin Film Formation, Hajdúszoboszló, Hungary, 18-24 September 1983).
456. J. Woltersdorf, E. Pippel, Thin Solid Films 116 (1984) 77 (Second International Summer School on Thin Film Formation, Hajdúszoboszló, Hungary, 18-24 September 1983).
457. L.B. Freund, W.D. Nix, Appl. Phys. Lett. 69 (1996) 173.
458. A.S. Brown, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 16 (1998) 2308 (25th Annu. Conf. on the Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, UT, 18-21 January 1998).
459. A.S. Brown, J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 16 (1998) 2308 (25th Annu. Conf. on the Physics and Chemistry of Semiconductor Interfaces, Salt Lake City, UT, 18-21 January 1998).
460. L.B. Freund, personal communication, 1998.
461. F.E. Ejeckam, Y.H. Lo, S. Subramanian, H.Q. Hou, B.E. Hammons, Appl. Phys. Lett. 70 (1997) 1685.
462. F.E. Ejeckam, M.L. Seaford, Y.-H. Lo, H.Q. Hou, B.E. Hammons, Appl. Phys. Lett. 71 (1997) 776.
463. Z.-H. Zhu, F.E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G.L. Christenson, Y.H. Lo, IEEE J. Selected Topics in Quantum Electronics 3 (1997) 927.
464. Z.H. Zhu, R. Zhou, F.E. Ejeckam, Z. Zhang, J. Zhang, J. Greenberg, Y.H. Lo, H.Q. Hou, B.E. Hammons, Appl. Phys. Lett. 72 (1998) 2598.
465. F.E. Ejeckam, Y. Qian, Z.H. Zhu, Y.H. Lo, S. Subramanian, S.L. Sass, in: Conf. Proc., LEOS '96 9th Annual Meeting, IEEE Lasers and Electro-Optics Society 1996 Annual Meeting, vol. 2, IEEE, New York, NY, 1996, pp. 352-353 (Boston, MA, 18-19 November 1996).
466. T.Y. Tan, U. Gösele, Appl. Phys. A, Mater. Sci. Process. A64 (1997) 631.
467. G. Kästner, U. Gösele, T.Y. Tan, Appl. Phys. A, Mater. Sci. Process. 66 (1998) 13.
468. Y.-H. Lo, Z.H. Zhu, in: Technical Digest of 1998 Int. Conf. on Solid State Devices and Materials (SSDM), 1998, pp. 228-229 (Hiroshima, Japan, 7-10 September 1998).
469. Y.-H. Lo, personal communication, 1998.
470. P. Kopperschmidt, St. Senz, R. Scholz, U. Gösele, Appl. Phys. Lett. 74 (1999) 374.
471. T. Kagawa, Y. Matsuoka, Appl. Phys. Lett. 69 (1996) 3057.
472. R.W. Bower, M.S. Ismail, B.E. Roberds, Appl. Phys. Lett. 62 (1993) 3485.
473. P. Kopperschmidt, S. Senz, G. Kästner, D. Hesse, U. Gösele, Appl. Phys. Lett. 72 (1998) 3181.