Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 3095-3106

  Chabal, Y J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (MATERIALS); BONDING; CHEMICAL BONDS; HIGH TEMPERATURE OPERATIONS; HYDROGEN; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LATTICE CONSTANTS; MATHEMATICAL MODELS; OXIDATION; SURFACES;

FREQUENCY SHIFTS; HYDROPHOBIC WAFERS; INFRARED ABSORPTION SPECTROSCOPY; MULTIPLE INTERNAL TRANSMISSION SPECTROSCOPY; SILICON WAFER BONDING; SPECTRAL BROADENING;

SILICON WAFERS;

EID: 0342292364     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. Proceedings of the 1st, 2nd, and 3rd International Symposia on Semiconductor Wafer Bonding: Science, Technology and Applications, The Electrochemical Society Proceedings Series (Electrochemical Society, Pennington, NJ, 1992-1995).
2. J. B. Lasky, S. R. Stiffler, F. R. White, and J. B. Abernathey, IEDM Tech. Dig., 684 (1985);
3. J. B. Lasky, Appl. Phys. Lett. 48, 78 (1986).
4. W. G. Maszara, J. Electrochem. Soc. 138, 341 (1991).
5. H. Baumann, S. Mak, and H. Münzel, Electrochem. Soc. Proc. 95-7, 471 (1995).
6. Y. J. Chabal, M. A. Hines, and D. Feijoo, J. Vac. Sci. Technol. A 13, 1719 (1995).
7. Handbook of Semiconductor Wafer Cleaning Technology: Science, Technology and Applications, edited by W. Kern (Noyes, Park Ridge, NJ, 1993), p. 433.
8. B. E. Deal and D. B. Kao, in Proceedings of the Tungsten and Other Refractory Metals for VLSI Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, PA, 1987), p. 27.
9. Y. J. Chabal, G. S. Higashi, K. Raghavachari, and V. A. Burrows, J. Vac. Sci. Technol. A 7, 2104 (1989).
10. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990);
11. G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Appl. Phys. Lett., ibid. 58, 1656 (1991).
12. R. Stengl, K.-Y. Ahn, and U. Gösele, Jpn. J. Appl. Phys. 27, L2364 (1988).
13. G. A. C. M. Spierings and J. Haisma, in Proceedings of the First International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, edited by U. Gösele, J. Haisma, T. Abe, and M. A. Schmidt, The Electrochemical Society Proceedings Series (Electrochemical Society, Pennington, NJ, 1991), PV 92-97, p. 18.
14. H. Baumgart, T. J. Letavic, and R. Egloff, Philips, J. Res. 49, 91 (1995).
15. W. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, J. Appl. Phys. 64, 2987 (1986).
16. Y. Backlund, K. Ljungberg, and A. Soderbarg, J. Microeng. 2, 158 (1992).
17. T. Abe, A. Uchiyama, K. Yoshizawa, Y. Nakazato, M. Miyawaki, and T. Ohmi, Jpn. J. Appl. Phys. 29, L2315 (1990);
18. S. Bengtsson and O. Engstrom, J. Electrochem. Soc. 137, 2297 (1990);
19. Q.-Y. Tong and U. Gösele, J. Microelectromech. Syst. 3, 29 (1994).
20. Y. J. Chabal, Surf. Sci. Rep. 8, 211 (1988).
21. R. J. Collins and H. Y. Fan, Phys. Rev. 93, 674 (1954).