Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

Applied Physics Letters

Volumn 70, Issue 11, 1997, Pages 1390-1392

  Tong, Q Y ^a,b   Gutjahr, K ^a   Hopfe, S ^a   Gosele U ^a,b   Lee, T H ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000268706     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118586     Document Type: Article

References (12)

1. M. Bruel, Electron. Lett. 31, 1201 (1995).
2. L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, and M. Bruel, Electron. Lett. 32, 1144(1996).
3. M. K. Weldon, V. Marsico, Y. J. Chabal, S. B. Christman, E. E. Chaban, D. C. Jacobson, J. B. Sapjeta, A. Pinczuk, B. S. Dennis, A. P. Mills, C. A. Goodwin, and C.-M. Hsieh, Proc. 1996 IEEE Int. SOI Conf. 96CH35937, 150 (1996).
4. J. Haisma, B. C. M. Spierings, U. K. P. Biermann, and A. A. van Gorkum, Appl. Opt. 33, 1154 (1994).
5. R. B. Bergmann, J. G. Darrant, A. R. Hyde, and J. H. Werner, International Conference on Coating on Glass, Oct. 27 (1996).
6. Q.-Y. Tong, T.-H. Lee, U. Gösele, P. Wemer, R. Brendel, R. Bergmann, and J. Werner (unpublished).
7. F. Lu, J. W. Corbett, and L. C. Snyder, Phys. Lett. A 77, 250 (1990).
8. J. L. Lindström, G. S. Oehrlein, G. J. Scilla, A. S. Yapsir, and J. W. Corbett, J. Appl. Phys. 65, 3297 (1989).
9. S. J. Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductor (Springer-Verlag, New York, 1992), pp. 319-330.
10. X. Lu, S. S. K. Iyer, J. Min, Z. Fan, J. B. Liu, P. K. Chu, C. Hu, and N. W. Chueng, Proc. 1996 IEEE Int. SOI Conf. 96CH35937, 48 (1996).
11. A. J. Auberton-Herve, T. Barge, F. Metral, M. Bruel, B. Aspar, C. Maleville, H. Moriceau, and T. Poumeyrol, Proceedings of 2nd International Symposium on Advanced Science and Technology Silicon Mater. (1996), p. 214.
12. Y. Kirm, H. Z. Massoud, U. M. Gösele, and R. B. Fair, Electrochem. Soc. Proc. 91-4, 304 (1991).