Low vacuum wafer bonding

Electrochemical and Solid-State Letters

Volumn 1, Issue 1, 1998, Pages 52-53

  Tong, Q Y ^a,b   Kim, W J ^a   Lee, T H ^a   Gosele U ^a,b  

^a DUKE UNIVERSITY   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; SILICA;

HYDROPHILIC COMPOUNDS; WAFER BONDING;

SILICON WAFERS;

EID: 0032122725     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390632     Document Type: Article

References (12)

1. W. Maszara, G. Goetz, A. Cavilia, and J. McKitterick, J. Appl. Phys., 64, 4943 (1988).
2. Q.-Y. Tong, C. Cha, R. Gafiteanu, and U. Gösele, J. Microelectromech.Syst., 3, 29 (1994).
3. Q.-Y. Tong and U. Gösele, J. Electrochem. Soc., 143, 1773 (1996).
4. U. Gösele, S. Hopfe, S. Li, S. Mack, T. Martini, M. Reiche, E. Schmidt, H. Stenzel, and Q.-Y. Tong, Appl. Phys. Lett., 67, 863 (1995).
5. K. Ljungberg, A. Söderbärg, and Y. Bäcklund, Appl. Phys. Lett., 62, 1362 (1993).
6. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, and K. Scheerschmidt, Appl. Phys. Lett.. 67, 3614 (1995).
7. H. Takagi, K. Kikuchi, R. Maeda, T. Chung, and T. Suga, Appl. Phys. Lett., 68, 2222 (1996).
8. R. Stengl, K. Y. Ahn, and U. Gösele, Jpn J. Appl. Phys., 27, 101 (1988).
9. T. A. Michalske and E. R. Fuller, J. Am. Ceram. Soc., 68, 586 (1985).
10. R. R. Razouk, L. N. Lie, and B. E. Deal, J. Electrochem. Soc., 128, 2214 (1981).
11. Q.-Y. Tong, R. Scholz, U. Gösele, T. H. Lee, L.-J. Huang, Y.-L. Chao, and T. Y. Tan, Appl. Phys. Lett., 72, 49 (1998).
12. M. Bruel, Electron. Lett., 31, 1201 (1995).