Electron and hole trapping in the buried oxide of unibond wafers1

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2106-2114

  Stahlbush, R E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODES; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TUNNELING; INTERFACES (MATERIALS); IRRADIATION; RADIATION EFFECTS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; X RAYS;

CHARGE TRAPPING; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX) TECHNOLOGY; X RAY IRRADIATION;

MOS DEVICES;

EID: 0031337845     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659025     Document Type: Article

References (29)

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