SCOPUS 정보 검색 플랫폼

Volumn 71, Issue 1, 1997, Pages 25-27

Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanted confinement region

(9) Qian, Y a Zhu, Z H a,e Lo, Y H a Huffaker, D L b Deppe, D G b Hou, H Q c Hammons, B E c Lin, W d Tu, Y K d

a Cornell University (United States)

b The University of Texas at Austin (United States)

c SANDIA NATIONAL LABORATORIES (United States)

d CHUNGHWA TELECOM CO LTD (Taiwan)

e ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT DENSITY; ION IMPLANTATION; MIRRORS; OPTIMIZATION; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

BRAGG REFLECTOR; OXYGEN IMPLANTED CURRENT CONFINEMENT; THRESHOLD CURRENT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS;

LASERS;

EID: 0031558189 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119459 Document Type: Article

Times cited : (32)

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