1.3 μm InGaAsP/InP lasers on GaAs substrate fabricated by the surface activated wafer bonding method at room temperature

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1565-1566

  Chung, Taekryong ^a   Hosoda, Naoe ^a   Suga, Tadatomo ^a   Takagi, Hideki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; INTEGRATED OPTOELECTRONICS; IRRADIATION; OPTICAL COMMUNICATION; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FAST ATOM BEAM; LASER INTENSITY; SURFACE ACTIVATED WAFER; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032026156     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121116     Document Type: Article

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