Room temperature GaAs-Si and InP-Si wafer direct bonding by the surface activated bonding method

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 203-206

  Chung, Taek Ryong ^a   Yang, Liu ^b   Hosoda, Naoe ^a   Suga, Tadatomo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SOUTHWEST JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON; SUBSTRATES; SURFACE TREATMENT; VAPOR DEPOSITION;

ATOMIC BEAM EFFECTS;

SILICON WAFERS;

EID: 0031546204     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00546-0     Document Type: Article

References (9)

1. Y.H. Lo, R. Bhat, D.M. Hwang, M.A. Koza and T.P. Lee, Appl. Phys. Lett. 58 (1991) 1961.
2. H. Wada, Y. Ogawa and T. Kamijoh, Appl. Phys. Lett. 62 (1993) 738.
3. J.J. Dudley, D.I. Babic, R. Mirin, L. Yang, B.I. Miller, R.J. Ram, T. Reynolds, E-L. Hu, and J.E. Bowers, Appl. Phys. Lett. 64 (1994) 1463.
4. Z.L. Liau and D.E. Mull, Appl. Phys. Lett. 56 (1990) 737.
5. K. Mori, K. Tokutume, K. Nishi and S. Sugou, Elec. Lett. 30 (1994) 1008.
6. Y. Okuno, M. Aoki, T. Tsuchiya and K. Uomi, Appl. Phys. Lett. 67 (1995) 810.
7. T. Suga, K. Miyazawa and Y. Yamagata, MRS Int. Meeting on Advanced Materials, eds. N. Iwamoto and T. Suga, Vol. 8 (1989) p. 257.
8. T. Suga, Y. Takahashi, H. Takagi, B. Gibbesch and G. Elssner, Acta Metall. Mater., Suppl. 40 (1992) S133.
9. T. Suga and N. Hosoda: Proc.IEEE Micro-Electromechanical System (Elsevier, Amsterdam, 1995) p. 413.