A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substrates

Journal De Physique. IV : JP

Volumn 8, Issue 3, 1998, Pages

  Jomaah, J ^a   Rauly, E ^a   Ghibaudo, G ^a   Balestra, F ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT RESISTANCE; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; THIN FILMS;

SELF HEATING EFFECTS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

MOSFET DEVICES;

EID: 0032093679     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:1998304     Document Type: Article

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