A flexible built-in gettering layer prepared by hydrophobic Si wafer bonding

Materials Chemistry and Physics

Volumn 45, Issue 3, 1996, Pages 223-227

  Tong, Q Y ^a   Hsia, S ^a   Gosele U ^a,c   Zimmermann, H ^b   Reiche, M ^c  

^a Duke University   (United States)

^b UNIVERSITY OF KIEL   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Gettering layers; Hydrophobic bonding; Silicon wafer bonding

Indexed keywords

ANNEALING; ATOMS; BONDING; COMPUTER SIMULATION; FLUORINE; GOLD; INTERFACES (MATERIALS); SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

GETTERING LAYERS; HYDROPHOBIC BONDING; ION PAIRING;

SEMICONDUCTING FILMS;

EID: 0030243975     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(96)80113-1     Document Type: Article

References (13)

1. H. Wong, N.W. Cheung, P.K. Chu, J. Liu and J.W. Mayer, Appl. Phys. Lett., 52 (1988) 1023.
2. D.H. Weiner, S.S. Wong and C.I. Drowley, Appl. Phys. Lett., 50 (1987) 986.
3. T. Kuroi, Y. Kawasaki, S. Komori, K. Fukumoto, M. Inuishi, K. Tsukamoto, H. Shinyashiki and T. Shingyoji, Jpn. J. Appl. Phys., 32 (1993) 303.
4. T.I. Kamins and S.Y. Chiang, J. Appl. Phys., 58 (1985) 2559.
5. A.S. Salih, Z. Radzimski, J. Honeycutt, G.A. Rozgonyi, K.E. Bean and K. Lindberg, Appl. Phys. Lett., 50 (1987) 1676.
6. R. Liefting, R.C. Wijburg, J.S. Custer, H. Wallinga and F.W. Saris, IEEE Trans. Electron Devices, 41 (1994) 50.
7. W.-S. Yang, K.-Y. Ahn, B.P. Marioton, R. Stengl and U. Gösele, Jpn. J. Appl. Phys., 5 (1989) L721.
8. S. Bengtsson and O. Engström, J. Appl. Phys., 66 (1989); 1231.
9. Q.-Y. Tong, E. Schmidt and U. Gösele, Appl. Phys. Lett., 64 (1994) 625.
10. U. Gösele, W. Frank and A. Seeger, Appl. Phys., 23 (1980) 361.
11. E.M. Rabinnovich, D.M. Krol and K. Gallagher, J. Am. Ceram. Soc., 72 (1989) 1229.
12. H. Zimmermann and H. Ryssel, Appl. Phys. A, 55 (1992) 121.
13. P. Pichler, Ph.D. Thesis, Technical University of Vienna, 1985.