Advanced quality in epitaxial layer transfer by bond and etch-back of porous Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 973-977

  Sato, Nobuhiko ^a   Sakaguchi, Kiyofumi ^a   Yamagata, Kenji ^a   Fujiyama, Yasutomo ^a   Nakayama, Jun ^a   Yonehara, Takao ^a  

^a CANON INC   (Japan)

Author keywords

Epitaxy; Hydrogen annealing; Pn junction diode; Porous silicon; Silicon on insulator; Stacking fault; Thickness uniformity; Wafer bonding

Indexed keywords

BONDING; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; STACKING FAULTS; SURFACE TREATMENT; THIN FILMS;

EPITAXIAL LAYER TRANSFER; ETCH BACK; HIGH RESOLUTION SCANNING ELECTRON MICROSCOPY; HYDROGEN ANNEALING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030078870     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.973     Document Type: Article

References (14)

1. M. Kimura, K. Egami, M. Kanamori and T. Hamaguchi: Appl. Phys. Lett. 43 (1983) 253.
2. J. B. Lasky, S. R. Stiffler, F. R. White and J. R. Abernathey: Tech. Dig. Int. Electron Devices Meeting (IEEE, New York, 1985) p. 684.
3. W. P. Maszara, G. Goetz, A. Caviglia and J. B. Mckitterick: J. Appl. Phys. 64 (1988) 4943.
4. C. E. Hunt and C. A. Desmond: Proc. 1st Int. Symp. Semiconductor Wafer Bonding: Science, Technology, and Applications (The Electrochemical Society, Pennington, 1992) PV 92-7, p. 165.
5. T. Yonehara, K. Sakaguchi and N. Sato: Appl. Phys. Lett. 64 (1994) 2108.
6. N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama and T. Yonehara: Proc. of the 7th Int. Symp. on Si Mater. Sci. and Tech. (The Electrochemical Society, Pennington, 1994) PV 94-10, p. 443.
7. K. Sakaguchi, N. Sato, K. Yamagata, Y. Fujiyama and T. Yonehara: Jpn. J. Appl. Phys. 34 (1995) 842.
8. T. Yonehara, K. Sakaguchi and N. Sato: Proc. 3rd Int. Symp. Semiconductor Wafer Bonding: Science, Technology, and Applications (The Electrochemical Society, Pennington, 1995) PV95-7, p. 47.
9. N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama and T. Yonehara: J. Electrochem. Soc. 142 (1995) 3116.
10. S. Brunauer, P. Emmett and E. Teller: J. Amer. Chem. Soc. 60 (1938) 309.
11. N. Sato and T. Yonehara: Appl. Phys. Lett. 65 (1994) 1924.
12. F. A. Stevie, E. P. Martin Jr., P. M. Kahora, J. T. Cargo, A. K. Nanda, A. S. Harrus, A. J. Muller and H. W. Krautter: J. Vac. Sci. & Technol. A9 (1991) 2813.
13. P. B. Mumola, G. J. Gardopee, T. Feng, A. M. Ledger, P. J. Clapis, and P. E. Miller: Proc. 2nd Int. Symp. Semiconductor Wafer Bonding: Science, Technology, and Applications (The Electrochemical Society, Pennington, 1992) PV 93-29, p. 410.
14. W. A. Krull, J. F. Buller, G. V. Rouse and R. D. Cherne: IEEE Circuits & Devices 3 (1987) 20.