Silicon carbide on insulator formation using the Smart Cut process

Electronics Letters

Volumn 32, Issue 12, 1996, Pages 1144-1145

  Di Cioccio, L ^a   Le Tiec, Y ^a   Letertre, F ^a   Jaussaud, C ^a   Bruel, M ^a  

^a CEA LETI   (France)

Author keywords

Silicon carbide; Wafer bonding

Indexed keywords

CRYSTAL DEFECTS; DIELECTRIC MATERIALS; HYDROGEN; ION IMPLANTATION; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE ON INSULATOR STRUCTURE; SMART CUT PROCESS; WAFER BONDING;

SILICON CARBIDE;

EID: 0030572294     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960717     Document Type: Article

References (4)

1. BRUEL, M.: 'Silicon on insulator material technology'. Electron. Lett., 1995, 31, (14), pp. 1201-1202
2. BRUEL, M.: 'Application of hydrogen ion beams to silicon on insulator material technology', Nucl. Instrum. and Methods Phys. Res. B, Beam Interact. Mater. At., 1996, (108), pp. 313-319
3. IVANOV, P.A., and CHELNOKOV, V.E.: 'Semiconductor silicon-carbide-technology and devices: A review', Semiconductors, 1995, 29, (11), pp. 1003-1013
4. TONG, Q.Y., GÖSELE, U., YUAN, C., STECKEL, A.J., and REICHE, M.: 'Silicon carbide wafer bonding', J. Eleclrochem. Soc., 1995, 142, (1), pp. 232-236