Molecular dynamics modelling of silicon wafer bonding

Computational Materials Science

Volumn 9, Issue 1-2, 1997, Pages 108-115

  Scheerschmidt, Kurt ^a   Conrad, Detlef ^a   Belov, Alexander ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

High resolution electron microscopic materials characterization; Molecular dynamics; Wafer bonding

Indexed keywords

BONDING; CRYSTAL ATOMIC STRUCTURE; ELECTRON MICROSCOPY; IMAGE ANALYSIS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SILICON WAFERS;

INTERFACE MODEL; WAFER BONDING;

COMPUTER SIMULATION;

EID: 0031340809     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0256(97)00064-5     Document Type: Article

References (6)

1. D. Conrad, K. Scheerschmidt, U. Gösele, Molecular dynamics simulations of silicon wafer bonding, Appl. Phys. A 62 (1996) 7-12.
2. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, K. Scheerschmidt, Self-propagating room temperature silicon wafer bonding in ultrahigh vacuum, Appl. Phys. Lett. 67 (24) (1995) 3614-3616.
3. A. Laporte, M. Benamara, G. Sarrabayrousse, A. Rocher, L. Lescouzeres, A. Peyre-Lavigne, A. Claverie, Misorientation induced defects at silicon bonding interfaces: Structural and electrical investigations, Electrochem. Soc. Proc. 95-7 (1995) 342-352.
4. R. Gafiteanu, S. Chevacharoenkul, U. Gösele, T.Y. Tan, Twist boundaries in silicon: A model system, Inst. Phys. Conf. Ser. 134 (1993) 87-90.
5. K. Scheerschmidt, D. Conrad, U. Gösele, Molecular dynamics simulations to investigate wafer bonded interfaces, Comput. Mater. Sci. 7 (1996) 40-47.
6. A. Yu. Belov, D. Conrad, K. Scheerschmidt, U. Gösele, Atomistic study of the (001) 90° twist boundary in silicon, Philos. Mag. Lett., in press.