1.55μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/InP-GaAs/AlAs DBRs

Electronics Letters

Volumn 32, Issue 16, 1996, Pages 1483-1484

  Ohiso, Y ^a   Amano, C ^a   Itoh, Y ^a   Tateno, K ^a   Tadokoro, T ^a   Takenouchi, H ^a   Kurokawa, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LIGHT EMISSION; LIGHT REFLECTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS;

BURIED HETEROSTRUCTURE; DISTRIBUTED BRAGG REFLECTORS; VERTICAL CAVITY SURFACE EMITTING LASERS; WAFER FUSION; WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0030212654     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960960     Document Type: Article

References (5)