Materials integration of gallium arsenide and silicon by wafer bonding

Applied Physics Letters

Volumn 72, Issue 24, 1998, Pages 3181-3183

  Kopperschmidt, P ^a   Senz, S ^a   Kastner G ^a   Hesse, D ^a   Gosele U M ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001181956     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121586     Document Type: Article

References (19)

1. H. Moroc, H. Unlu, H. Zabel, and N. Otsuka, Semicond. Sci. Technol. 31, 71 (1988).
2. P. C. Zalm, P. M. J. Marée, and R. I. J. Olthof, Appl. Phys. Lett. 46, 597 (1985).
3. H. J. Gillespie, G. E. Crook, and R. J. Matyl, Appl. Phys. Lett. 60, 721 (1992).
4. J. G. Zhu and C. B. Carter, Philos. Mag. A 62, 319 (1990).
5. N. Otsuka, C. Choi, Y. Nakamura, S. Nagakura, R. Fischer, C. K. Peng, and H. Morkoc, Appl. Phys. Lett. 49, 277 (1986).
6. H. Tanino, S. Amano, H. Kawanami, and H. Matsuhata, J. Appl. Phys. 70, 7068 (1991).
7. K. Adomi, S. Strite, H. Morkoc, Y. Nakamura, and N. Otsuka, J. Appl. Phys. 69, 220 (1991).
8. R. Fischer, W. T. Masselink, J. Klem, T. Henderson, T. C. McGlinn, M. V. Klein, H. Morkoc, J. H. Mazur, and J. Washburn, J. Appl. Phys. 58, 374 (1985).
9. S. Nishi, H. Inomata, M. Akiyama, and K. Kaminishi, Jpn. J. Appl. Phys., Part 1 24, 391 (1984).
10. L. Sugiura, J. Appl. Phys. 81, 1633 (1997).
11. Proceedings of 3rd International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, edited by C. Hunt, H. Baumgart, S. Iyer, U. Gosele, and T. Abe (Electrochem. Society, Pennington, NJ, 1995), PV-95-7.
12. S. Bengtsson, J. Electron. Mater. 21, 669 (1992).
13. Q.-Y. Tong and U. Gösele, Mater. Chem. Phys. 37, 101 (1994).
14. G. G. Goetz and A. M. Fathimulla, Generalized Bonding, IEEE SOS/SOI Technology Conference, High Sierra Hotel Stateline, Nevada, USA, Oct. 3-5, 1989, (IEEE, New York, 1989).
15. T. R. Chung, L. Yang, N. Hosoda, and T. Suga, Nucl. Instrum. Methods Phys. Res. B 121, 203 (1997).
16. P. Kopperschmidt, G. Kästner, D. Hesse, N. D. Zakharov, and U. Gösele, Appl. Phys. Lett. 70, 2972 (1997).
17. P. Kopperschmidt, G. Kästner, St. Senz, D. Hesse, and U. M. Gösele, Appl. Phys. A 64, 533 (1997).
18. M. Bruel, Electron. Lett. 32, 657 (1995).
19. Q.-Y. Tong, K. Gutjahr, S. Hopfe, U. Gösele, and T.-H. Lee, Appl. Phys. Lett. 70, 1390 (1997).