Fabrication of 3C-SiC on SiO2 structures using wafer bonding techniques

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 223-226

  Zorman, C A ^a   Vinod, K N ^a   Yasseen, A ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

APCVD; Defect Density; Mechanical Polishing; Polysilicon; SiO2; Wafer Bonding

Indexed keywords

CRYSTAL DEFECTS; DISSIMILAR MATERIALS; FILM GROWTH; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS;

POLYSILICON BONDING; WAFER BONDING TECHNIQUES;

SILICON CARBIDE;

EID: 3743088187     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (6)

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