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Volumn 19, Issue 12, 1997, Pages 1871-1873

Transposed splitting of silicon implanted with spatially offset distributions of hydrogen and boron

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0342291639     PISSN: 03926737     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (13)
  • 8
    • 0343108053 scopus 로고    scopus 로고
    • The Hydrogen Ion Cut Technology Combined with Low Temperature Direct Bonding
    • BOWER R. W., YANG A. LI and YONG JIAN CHIN, The Hydrogen Ion Cut Technology Combined with Low Temperature Direct Bonding, in Proceedings of SPIE, Vol. 3184 (1997), p. 2.
    • (1997) Proceedings of SPIE , vol.3184 , pp. 2
    • Bower, R.W.1    Yang, A.L.I.2    Yong, J.C.3
  • 9
    • 33749633000 scopus 로고    scopus 로고
    • Surface Conditions and Morphology of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers
    • ALBERT LI Y. and BOWER R. W., Surface Conditions and Morphology of Hydrogen Ion Cut Low Temperature Bonded Thin Film Layers, submitted to J. Appl. Phys.
    • J. Appl. Phys.
    • Albert Li, Y.1    Bower, R.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.