Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4892-4903

  Patriarche, G ^a   Jeannes F ^a   Oudar, J L ^a   Glas, F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; BONDED INTERFACE; BONDING PROCESS; DIRECT WAFER BONDING; DISLOCATION LINES; DISLOCATION NETWORKS; HETEROSTRUCTURES; HIGH REFLECTIVITY; INP; LONG WAVELENGTH; MICROCAVITY DEVICES; SURFACE EMITTING;

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; CRYSTALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LATTICE MISMATCH; OPTICAL INSTRUMENTS; REFLECTION; TRANSMISSION ELECTRON MICROSCOPY; CRYSTAL DEFECTS; INTERFACES (MATERIALS); OPTIMIZATION; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

WAFER BONDING; SEMICONDUCTOR DEVICE STRUCTURES;

DIRECT WAFER BONDING; SURFACE EMITTING OPTICAL DEVICES;

EID: 0031273753     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366353     Document Type: Article

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