Application of hydrogen ion beams to silicon on insulator material technology

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 108, Issue 3, 1996, Pages 313-319

  Bruel, Michel ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039331932     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01056-4     Document Type: Article

References (10)

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3. M. Bruel, Electron. Lett. 31 (1995) 1201.
4. M. Kaminsky, IEEE Trans. Nucl. Sci. NS-18 (1971) 208.
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6. R.G. Saint Jacques, Nucl. Instr. and Meth. 209/210 (1983) 333.
7. W.J. Choyke, R.B. Irwin, J.N. Mc Gruer, J.R. Townsend, N.J. Doyle, B.O. Hall, J.A. Spitznagell and S. Wood, Nucl. Instr. and Meth. 209/210 (1983) 407.
8. W.K. Chu, R.H. Kastl, R.F. Lever, S. Mader and B.J. Masters, in: Ion Implantation in Semiconductors 1976, eds. Chemow, Borders and Brice (Plenum, New York, 1977) p. 483.
9. W.K. Chu, R.H. Kastl, R.F. Lever, S. Mader and B.J. Masters, Phys. Rev. B 16 (1977) 3851.
10. J. Margail, J.M. Lamure and A.M. Papon, Proc. 5th Int. Symp. on Silicon on Insulator Technology and Devices, vol. 92.13, ed. W.E. Bailey (The Electrochemical Society Inc., 1992) p. 207.