Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substrates

Applied Physics Letters

Volumn 72, Issue 20, 1998, Pages 2598-2600

  Zhu, Z H ^a   Zhou, R ^a   Ejeckam, F E ^a   Zhang, Z ^a   Zhang, J ^a   Greenberg, J ^a   Lo, Y H ^a   Hou, H Q ^b   Hammons, B E ^b  

^a Cornell University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000398955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121429     Document Type: Article

References (7)

1. F. Heinrichsdroff, M.-H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, Appl. Phys. Lett. 71, 22 (1997).
2. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, IEEE J. Sel. Top. Quantum Electron. 3, 719 (1997).
3. F. E. Ejeckam, Y. H. Lo, S. Subramanian, H. Q. Hou, and B. E. Hammons, Appl. Phys. Lett. 70, 1685 (1997).
4. F. E. Ejeckam, M. L. Seaford Y. H. Lo, H. Q. Hou, and B. E. Hammons, Appl. Phys. Lett. 71, 776 (1997).
5. Z. H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. H. Lo, IEEE J. Sel. Top. Quantum Electron. 3, 927 (1997).
6. K. H. Chang, R. Gibala, D. Srolovitz, P. K. Bhattacharya, and J. F. Mansfield, J. Appl. Phys. 67, 4093 (1990).
7. M. Albercht, S. Christiansen, J. Michler, W. Dorsch, H. P. Strunk, P. O. Hansson, and E. Bauser, Appl. Phys. Lett. 67, 1232 (1995).