Misaligned (or twist) wafer-bonding: A new technology for making III-V compliant substrates

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 1996, Pages 352-353

  Ejeckam, F E ^a   Qian, Y ^a   Zhu, Z H ^a   Lo, Y H ^a   Subramanian, S ^a   Sass, S L ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); LATTICE CONSTANTS; MATHEMATICAL MODELS; SINGLE CRYSTALS; SUBSTRATES;

BONDING ENERGY; CRITICAL FORCE DENSITY; SCREW DISLOCATIONS; TWIST ANGLE; WAFER BONDING;

THIN FILMS;

EID: 0030408619     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)