Phase identification of micro and macro bubbles at the interface of directly bonded GaAs on sapphire

Journal of Materials Science

Volumn 33, Issue 8, 1998, Pages 2073-2077

  Senz, St ^a   Kopperschmidt, P ^a   Kastner G ^a   Hesse, D ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; BONDING; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN BONDS; SAPPHIRE; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES; X RAY CRYSTALLOGRAPHY;

DIRECT WAFER BONDING (DWB); ENERGY DISPERSIVE X RAY ANALYSIS (EDX); SELECTED AREA ELECTRON DIFFRACTION (SAED);

INTERFACES (MATERIALS);

EID: 0032047808     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004310917627     Document Type: Article

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