-
1
-
-
0346955939
-
Defects in epitaxial multilayers
-
J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers," J. Cryst. Growth, vol. 27, pp. 118-125, 1974.
-
(1974)
J. Cryst. Growth
, vol.27
, pp. 118-125
-
-
Matthews, J.W.1
Blakeslee, A.E.2
-
2
-
-
0000575813
-
Dislocation reduction in epitaxial GaAs on Si (100)
-
H. Fischer, D. Neuraan, H. Zabel, and H. Morkoc, "Dislocation reduction in epitaxial GaAs on Si (100)," Appl. Phys. Lett., vol. 48, no. 18, pp. 1223-1225, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.48
, Issue.18
, pp. 1223-1225
-
-
Fischer, H.1
Neuraan, D.2
Zabel, H.3
Morkoc, H.4
-
3
-
-
21544474632
-
Extreme selectivity in the lift-off of epitaxial GaAs films
-
E. Yablonovitch, T. Gmitter, J-P. Harbison and R. Bhat, "Extreme selectivity in the lift-off of epitaxial GaAs films," Appl. Phys. Lett, vol. 51, no. 26, pp. 2222-2224, 1987.
-
(1987)
Appl. Phys. Lett
, vol.51
, Issue.26
, pp. 2222-2224
-
-
Yablonovitch, E.1
Gmitter, T.2
Harbison, J.-P.3
Bhat, R.4
-
4
-
-
0000601328
-
High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates
-
R. Venkatasubramanian, M. L. Timmons, T. P. Humphreys, B. M. Keyes, and R. K. Ahrenkiel, "High-quality eutectic-metal-bonded AlGaAs-GaAs thin films on Si substrates," Appl. Phys. Lett., vol. 60, no. 7, pp. 886-888, 1992.
-
(1992)
Appl. Phys. Lett.
, vol.60
, Issue.7
, pp. 886-888
-
-
Venkatasubramanian, R.1
Timmons, M.L.2
Humphreys, T.P.3
Keyes, B.M.4
Ahrenkiel, R.K.5
-
5
-
-
0028388250
-
Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal
-
H-J. Yeh and J. Smith, "Integration of GaAs vertical-cavity surface emitting laser on Si by substrate removal," Appl. Phys. Lett., vol. 64, no. 12, pp. 1466-1468, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.12
, pp. 1466-1468
-
-
Yeh, H.-J.1
Smith, J.2
-
6
-
-
21544474791
-
Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
-
Z. L. Liau and D. E. Mull, "Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration," Appl. Phys. Lett., vol. 56, no. 8, pp. 737-739, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.56
, Issue.8
, pp. 737-739
-
-
Liau, Z.L.1
Mull, D.E.2
-
7
-
-
21544450368
-
Bonding by atomic rearrangement of InP/InGaAs 1.5 μm wavelength lasers on GaAs substrates
-
Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee, "Bonding by atomic rearrangement of InP/InGaAs 1.5 μm wavelength lasers on GaAs substrates," Appl. Phys. Lett, vol. 58, no. 18, pp. 1961-1963, 1991.
-
(1991)
Appl. Phys. Lett
, vol.58
, Issue.18
, pp. 1961-1963
-
-
Lo, Y.H.1
Bhat, R.2
Hwang, D.M.3
Koza, M.A.4
Lee, T.P.5
-
8
-
-
0027911766
-
Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
-
Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C. H. Lin, "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement," Appl. Phys. Lett., vol. 62, no. 10, pp. 1038-1040, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.62
, Issue.10
, pp. 1038-1040
-
-
Lo, Y.H.1
Bhat, R.2
Hwang, D.M.3
Chua, C.4
Lin, C.H.5
-
9
-
-
0029378645
-
GaAs to InP wafer fusion
-
R. J. Ram, J. J. Dudley, J. E. Bowers, L. Yang, K. Carey, S. J. Rosner, and K. Nauka, "GaAs to InP wafer fusion," J. Appl. Phys., vol. 78, no. 6, pp. 4227-4237, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, Issue.6
, pp. 4227-4237
-
-
Ram, R.J.1
Dudley, J.J.2
Bowers, J.E.3
Yang, L.4
Carey, K.5
Rosner, S.J.6
Nauka, K.7
-
10
-
-
0030401267
-
Wafer bonding technology and its applications in optoelectronic devices
-
Z. H. Zhu, G. L. Ding, K. S. Chen, F. E. Ejeckam, Y. Qian, G. L. Christenson, and Y. H. Lo, "Wafer bonding technology and its applications in optoelectronic devices," in Proc. SPIE, vol. 2891, pp. 147-158, 1996.
-
(1996)
Proc. SPIE
, vol.2891
, pp. 147-158
-
-
Zhu, Z.H.1
Ding, G.L.2
Chen, K.S.3
Ejeckam, F.E.4
Qian, Y.5
Christenson, G.L.6
Lo, Y.H.7
-
11
-
-
0030396009
-
Direct bonding of high quality InP on Si and its applications to optoelectronic devices
-
K. Mori, K. Tokutome, and S. Sugou, "Direct bonding of high quality InP on Si and its applications to optoelectronic devices," in Proc. IEEE LEOS '96 Conf, 1996, pp. 296-297.
-
(1996)
Proc. IEEE LEOS '96 Conf
, pp. 296-297
-
-
Mori, K.1
Tokutome, K.2
Sugou, S.3
-
12
-
-
0000539610
-
Wafer bonding of 50 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
-
G. E. Hofler, D. A. Vanderwater, D. C. DeFevere, F. A. Kish, M. D. Camras, F. M. Steranka, and I. H. Tan, "Wafer bonding of 50 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers," Appl. Phys. Lett., vol. 69, no. 9, pp. 803-805, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.9
, pp. 803-805
-
-
Hofler, G.E.1
Vanderwater, D.A.2
Defevere, D.C.3
Kish, F.A.4
Camras, M.D.5
Steranka, F.M.6
Tan, I.H.7
-
13
-
-
21544484414
-
Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces
-
F. A. Kish, D. A. Vanderwater, M. J. Peanasky, M. J. Ludowise, S. G. Hummel, and S. J. Rosner, "Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces," Appl. Phys. Lett., vol. 67, no. 14, pp. 2060-2062, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.14
, pp. 2060-2062
-
-
Kish, F.A.1
Vanderwater, D.A.2
Peanasky, M.J.3
Ludowise, M.J.4
Hummel, S.G.5
Rosner, S.J.6
-
14
-
-
4043085762
-
Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers
-
R. J. Ram, L. Yang, K. Nauka, Y. M. Houng, M. Ludowise, D. E. Mars, J. J. Dudley, and S. Y. Wang, "Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers," Appl. Phys. Lett., vol. 62, no. 7, pp. 738-740, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.62
, Issue.7
, pp. 738-740
-
-
Ram, R.J.1
Yang, L.2
Nauka, K.3
Houng, Y.M.4
Ludowise, M.5
Mars, D.E.6
Dudley, J.J.7
Wang, S.Y.8
-
15
-
-
33847543784
-
Wafer bonding technology and its optoelectronic applications
-
Y. H. Lo, Z. H. Zhu, Y. Qian, F. E. Ejeckam, and G. L. Christenson, "Wafer bonding technology and its optoelectronic applications," in Proc. SPIE, vol. 3006, pp. 26-35, 1997.
-
(1997)
Proc. SPIE
, vol.3006
, pp. 26-35
-
-
Lo, Y.H.1
Zhu, Z.H.2
Qian, Y.3
Ejeckam, F.E.4
Christenson, G.L.5
-
16
-
-
21544466248
-
Electrical characteristics of directly-bonded GaAs and InP
-
H. Wada, Y. Ogawa, and T. Kamijoh, "Electrical characteristics of directly-bonded GaAs and InP," Appl. Phys. Lett, vol. 62, no. 20, pp. 2474-2476, 1993.
-
(1993)
Appl. Phys. Lett
, vol.62
, Issue.20
, pp. 2474-2476
-
-
Wada, H.1
Ogawa, Y.2
Kamijoh, T.3
-
17
-
-
0006429136
-
Investigation on direct bonding of III-V semiconductor wafers with lattice mismatch and orientation mismatch
-
Y. Okuno, "Investigation on direct bonding of III-V semiconductor wafers with lattice mismatch and orientation mismatch," Appl. Phys. Lett., vol. 68, no. 20, pp. 2855-2857, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.20
, pp. 2855-2857
-
-
Okuno, Y.1
-
18
-
-
0028423317
-
0.5 P/InP LED's
-
0.5 P/InP LED's," Appl. Phys. Lett., vol. 64, no. 21, pp. 2839-2841, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, Issue.21
, pp. 2839-2841
-
-
Kish, F.A.1
Steranka, F.M.2
Defevere, D.C.3
Vanderwater, D.A.4
Park, K.G.5
Kuo, C.P.6
Osentowski, T.D.7
Peanasky, M.J.8
Yu, J.G.9
Fletcher, R.M.10
Streigerwald, D.A.11
Crawford, M.G.12
Robbins, V.M.13
-
19
-
-
0030410382
-
Wafer-scale production of LED's via wafer-bonding achievements and challenges
-
F. A. Kish, "Wafer-scale production of LED's via wafer-bonding achievements and challenges," in Proc. IEEE LEOS '96 Conf., 1996, pp. 292-293.
-
(1996)
Proc. IEEE LEOS '96 Conf.
, pp. 292-293
-
-
Kish, F.A.1
-
21
-
-
0029406848
-
Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers
-
Nov.
-
D. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, E. L. Hu, D. E. Mars, L. Yang, and K. Carey, "Room-temperature continuous-wave operation of 1.54 μm vertical-cavity lasers," IEEE Photon. Technol. Lett, vol. 7, pp. 1225-1227, Nov. 1995.
-
(1995)
IEEE Photon. Technol. Lett
, vol.7
, pp. 1225-1227
-
-
Babic, D.1
Streubel, K.2
Mirin, R.P.3
Margalit, N.M.4
Bowers, J.E.5
Hu, E.L.6
Mars, D.E.7
Yang, L.8
Carey, K.9
-
22
-
-
0030189343
-
Laterally oxidized long wavelength CW vertical-cavity lasers
-
N. M. Margalit, D. I. Babic, K. Streubel, R. P. Mirin, D. E. Mars, J. E. Bowers, and E. L. Hu, "Laterally oxidized long wavelength CW vertical-cavity lasers," Appl. Phys. Lett., vol. 69, no. 4, pp. 471-472, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.4
, pp. 471-472
-
-
Margalit, N.M.1
Babic, D.I.2
Streubel, K.3
Mirin, R.P.4
Mars, D.E.5
Bowers, J.E.6
Hu, E.L.7
-
23
-
-
0030150560
-
Single-mode, 1 Gb/s operation of double-fused vertical-cavity lasers at 1.54 μm
-
May
-
P. Blixt, D. I. Babic, K. Streubel, N. M. Margalit, T. E. Reynolds, J. E. Bowers, "Single-mode, 1 Gb/s operation of double-fused vertical-cavity lasers at 1.54 μm," IEEE Photon. Technol. Lett, vol. 8, pp. 700-702, May 1996.
-
(1996)
IEEE Photon. Technol. Lett
, vol.8
, pp. 700-702
-
-
Blixt, P.1
Babic, D.I.2
Streubel, K.3
Margalit, N.M.4
Reynolds, T.E.5
Bowers, J.E.6
-
24
-
-
0030212654
-
1.55 μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/In-GaAs/AlAs DBR's
-
Y. Ohiso, C. Amano, Y. Itoh, K. Tateno, T. Tadokoro, H. Takenouchi, and T. Kurokawa, "1.55 μm vertical-cavity surface-emitting lasers with wafer-fused InGaAsP/In-GaAs/AlAs DBR's," Electron. Lett., vol. 32, no. 16, pp. 1483-1484, 1996.
-
(1996)
Electron. Lett.
, vol.32
, Issue.16
, pp. 1483-1484
-
-
Ohiso, Y.1
Amano, C.2
Itoh, Y.3
Tateno, K.4
Tadokoro, T.5
Takenouchi, H.6
Kurokawa, T.7
-
25
-
-
0030736344
-
1.3 μm VCSEL's with double-bonded GaAs-AlAs Bragg mirrors
-
Jan.
-
Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, M. C. Wang, and W. Lin, "1.3 μm VCSEL's with double-bonded GaAs-AlAs Bragg mirrors," IEEE Photon. Technol. Lett., vol. 9, pp. 8-10, Jan. 1997.
-
(1997)
IEEE Photon. Technol. Lett.
, vol.9
, pp. 8-10
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Hou, H.Q.4
Wang, M.C.5
Lin, W.6
-
26
-
-
0031185335
-
Low threshold proton-implanted 1.3 μm vertical-cavity top-surface emitting lasers with dielectric and wafer-bonded GaAs/AlAs Bragg mirrors
-
to be published
-
Y. Qian, Z. H. Zhu, Y. H. Lo, D. L. Huffaker, D. G. Depper, H. Q. Hou, B. E. Hammons, W. Lin, and Y. K. Tu, "Low threshold proton-implanted 1.3 μm vertical-cavity top-surface emitting lasers with dielectric and wafer-bonded GaAs/AlAs Bragg mirrors," IEEE Photon. Technol. Lett., to be published.
-
IEEE Photon. Technol. Lett.
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Huffaker, D.L.4
Depper, D.G.5
Hou, H.Q.6
Hammons, B.E.7
Lin, W.8
Tu, Y.K.9
-
27
-
-
84866203261
-
-
presented at OFC '97, post-deadline paper PD-14
-
Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, B. E. Hammons, D. L. Huffaker, D. G. Depper, W. Lin, and Y. K. Tu, "Low threshold room temperature CW 1.3 μm single-bonded VCSEL's using oxygenimplanted confinement," presented at OFC '97, 1997, post-deadline paper PD-14.
-
(1997)
Low Threshold Room Temperature CW 1.3 μM Single-bonded VCSEL's Using Oxygenimplanted Confinement
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Hou, H.Q.4
Hammons, B.E.5
Huffaker, D.L.6
Depper, D.G.7
Lin, W.8
Tu, Y.K.9
-
28
-
-
0031558189
-
Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanled continernent region
-
to be published
-
Y. Qian, Z. H. Zhu, Y. H. Lo, H. Q. Hou, B. E. Hammons, D. L. Huffaker, D. G. Depper, W. Lin, and Y. K. Tu, "Long wavelength (1.3 μm) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and an oxygen-implanled continernent region," Appl. Phys. Lett., to be published.
-
Appl. Phys. Lett.
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Hou, H.Q.4
Hammons, B.E.5
Huffaker, D.L.6
Depper, D.G.7
Lin, W.8
Tu, Y.K.9
-
29
-
-
84866186663
-
2
-
to be published
-
2," Electron. Lett., to be published.
-
Electron. Lett.
-
-
Qian, Y.1
Zhu, Z.H.2
Lo, Y.H.3
Hou, H.Q.4
Hammons, B.E.5
Huffaker, D.L.6
Depper, D.G.7
Lin, W.8
Tu, Y.K.9
-
30
-
-
0028463352
-
0.47 As photodetectors
-
July
-
0.47 As photodetectors," IEEE Photon. Technol. Lett., vol. 6, pp. 811-813, July 1994.
-
(1994)
IEEE Photon. Technol. Lett.
, vol.6
, pp. 811-813
-
-
Tan, I.-H.1
Dudley, J.J.2
Babic, D.I.3
Cohen, D.A.4
Young, B.D.5
Hu, E.L.6
Bowers, J.E.7
Miller, B.I.8
Koren, U.9
Young, M.G.10
-
31
-
-
0029321666
-
High efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths
-
June
-
S. S. Murtaza, I-H. Tan, R. V. Chelakara, M. R. Islam, A. Srinivason, K. A. Anselm, J. E. Bowers, E. L. Hu, R. D. Dupuis, B. G. Streetman, and J. C. Campbell, "High efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths," IEEE Photon. Technol. Lett., vol. 7, pp. 679-681, June 1995.
-
(1995)
IEEE Photon. Technol. Lett.
, vol.7
, pp. 679-681
-
-
Murtaza, S.S.1
Tan, I.-H.2
Chelakara, R.V.3
Islam, M.R.4
Srinivason, A.5
Anselm, K.A.6
Bowers, J.E.7
Hu, E.L.8
Dupuis, R.D.9
Streetman, B.G.10
Campbell, J.C.11
-
32
-
-
0029511778
-
High performance InGaAs photodetectors on Si and GaAs substrate
-
F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, R. Bhat, "High performance InGaAs photodetectors on Si and GaAs substrate," Appl. Phys. Lett., vol. 67, no. 26, pp. 3936-3939, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.26
, pp. 3936-3939
-
-
Ejeckam, F.E.1
Chua, C.L.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Bhat, R.6
-
33
-
-
0029700878
-
Reliability studies of wafer-bonded InGaAs pin photodetectors on GaAs substrates
-
F. E. Ejeckam, C. L. Chua, Z. H. Zhu, Y. H. Lo, M. Hong, J. P. Annaerts, and R. Bhat, "Reliability studies of wafer-bonded InGaAs pin photodetectors on GaAs substrates," in Tech. Dig. IEEE CLEO '96 Conf., 1996, p. 492.
-
(1996)
Tech. Dig. IEEE CLEO '96 Conf.
, pp. 492
-
-
Ejeckam, F.E.1
Chua, C.L.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Annaerts, J.P.6
Bhat, R.7
-
34
-
-
0029546434
-
Silicon hetero-interface photodetector
-
A. R. Hawkins, T. Reynolds, D. R. England, D. I. Babic, M. Mondry, and J. E. Bowers, "Silicon hetero-interface photodetector," in Proc. IEEE LEOS '95 Conf., 1995, pp. 29-30.
-
(1995)
Proc. IEEE LEOS '95 Conf.
, pp. 29-30
-
-
Hawkins, A.R.1
Reynolds, T.2
England, D.R.3
Babic, D.I.4
Mondry, M.5
Bowers, J.E.6
-
35
-
-
4043102822
-
InGaAs-silicon avalanche photodetectors
-
A. R. Hawkins, W. Wu, J. E. Bowers, "InGaAs-silicon avalanche photodetectors," in SPIE Proc. Ser., vol. 2999, 1997.
-
(1997)
SPIE Proc. Ser.
, vol.2999
-
-
Hawkins, A.R.1
Wu, W.2
Bowers, J.E.3
-
36
-
-
0030415466
-
Tunable long wavelength LED using wafer bonding and micromachining tech-nologies
-
G. L. Christenson, A. T. T. D. Tran, Z. H. Zhu, Y. H. Lo, M. Hong, J. P. Mannaerts, and R. Bhat, "Tunable long wavelength LED using wafer bonding and micromachining tech-nologies," in Proc. IEEE LEOS '96 Conf., 1996, pp. 294-295.
-
(1996)
Proc. IEEE LEOS '96 Conf.
, pp. 294-295
-
-
Christenson, G.L.1
Tran, A.T.T.D.2
Zhu, Z.H.3
Lo, Y.H.4
Hong, M.5
Mannaerts, J.P.6
Bhat, R.7
-
37
-
-
0030130253
-
Sub-milliwatt optical bistability in wafer fused vertical cavity at 1.55 μm wavelength
-
Apr.
-
F. Jeannes, G. Patriarche, R. Azoulay, A. Ougazzaden, J. Landreau, and J. L. Oudar, "Sub-milliwatt optical bistability in wafer fused vertical cavity at 1.55 μm wavelength," IEEE Photon. Technol. Lett., vol. 8, pp. 539-541, Apr. 1996.
-
(1996)
IEEE Photon. Technol. Lett.
, vol.8
, pp. 539-541
-
-
Jeannes, F.1
Patriarche, G.2
Azoulay, R.3
Ougazzaden, A.4
Landreau, J.5
Oudar, J.L.6
-
38
-
-
0030400131
-
Nonlinear optical devices for WDM system applications realized by wafer-bonding, in
-
S. J. B. Yoo, "Nonlinear optical devices for WDM system applications realized by wafer-bonding, in Proc. IEEE LEOS '96 Conf., 1996, pp. 350-351.
-
(1996)
Proc. IEEE LEOS '96 Conf.
, pp. 350-351
-
-
Yoo, S.J.B.1
-
39
-
-
0029270924
-
3 single crystals for wave-guides
-
3 single crystals for wave-guides," Appl. Phys. Lett., vol. 66, no. 12, pp. 1484-1486, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.12
, pp. 1484-1486
-
-
Tomita, Y.1
Sugimoto, M.2
Eda, K.3
-
40
-
-
0000009599
-
Cleaved GaN facets by wafer fusion of GaN to InP
-
R. K. Sink, S. Keller, B. R. Keller, D. I. Babic, A. L. Holmes, D. Kapolnek, S. P. DenBaars, J. E. Bowers, X. H. Wu, and J. S. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP," Appl. Phys. Lett., vol. 68, no. 15, pp. 2147-2149, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, Issue.15
, pp. 2147-2149
-
-
Sink, R.K.1
Keller, S.2
Keller, B.R.3
Babic, D.I.4
Holmes, A.L.5
Kapolnek, D.6
DenBaars, S.P.7
Bowers, J.E.8
Wu, X.H.9
Speck, J.S.10
-
41
-
-
0000913099
-
Dislocation-free InSb grown on GaAs compliant universal substrates
-
to be published
-
F. E. Ejeckam, M. Seaford, Y.-H. Lo, H. Q. Hou, and B. E. Hammons, "Dislocation-free InSb grown on GaAs compliant universal substrates," Appl. Phys. Lett., to be published.
-
Appl. Phys. Lett.
-
-
Ejeckam, F.E.1
Seaford, M.2
Lo, Y.-H.3
Hou, H.Q.4
Hammons, B.E.5
-
42
-
-
4043142333
-
Accommodating lattice-mismatches of greater than 14% using compliant universal (CU) substrates
-
Cape Cod, MA, May 11-15
-
F. E. Ejeckam, M. Seaford, Z.-H. Zhu, Y. H. Lo, H. Q. Hou, and B. E. Hammons, "Accommodating lattice-mismatches of greater than 14% using compliant universal (CU) substrates," presented at the 9th Int. Conf. Indium Phosphide and Related Materials, Cape Cod, MA, May 11-15, 1997.
-
(1997)
9th Int. Conf. Indium Phosphide and Related Materials
-
-
Ejeckam, F.E.1
Seaford, M.2
Zhu, Z.-H.3
Lo, Y.H.4
Hou, H.Q.5
Hammons, B.E.6
-
43
-
-
0000356406
-
Lattice engineered compliant substrate for defect-free heteroepitaxial growth
-
F. E. Ejeckam, Y. H. Lo, S. Subramanian, H. Q. Hou, and B. E. Hammons, "Lattice engineered compliant substrate for defect-free heteroepitaxial growth," Appl. Phys. Lett., vol. 70, no. 13, pp. 1685-1687, 1997.
-
(1997)
Appl. Phys. Lett.
, vol.70
, Issue.13
, pp. 1685-1687
-
-
Ejeckam, F.E.1
Lo, Y.H.2
Subramanian, S.3
Hou, H.Q.4
Hammons, B.E.5
-
44
-
-
0000079776
-
A new approach to grow pseudomorphic structures over the critical thickness
-
Y. H. Lo, "A new approach to grow pseudomorphic structures over the critical thickness," Appl. Phys. Lett., vol. 59, p. 2311, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2311
-
-
Lo, Y.H.1
-
45
-
-
0001057599
-
A critical thickness condition for a strained compliant substrate/epitaxial film system
-
L. B. Freund and W. D. Nix, "A critical thickness condition for a strained compliant substrate/epitaxial film system," Appl. Phys. Lett., vol. 69, no. 2, pp. 173-175, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.2
, pp. 173-175
-
-
Freund, L.B.1
Nix, W.D.2
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