Improved GaAs bonding process for quasi-phase-matched second harmonic generation

Journal of the Electrochemical Society

Volumn 145, Issue 1, 1998, Pages 366-371

  Wu, Y S ^a   Feigelson, R S ^a   Route, R K ^b   Zheng, D ^b   Gordon, L A ^b   Fejer, M M ^b   Byer, R L ^b  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON DIOXIDE LASERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSION; INTERFACES (MATERIALS); PLASMAS; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE;

DIFFUSION BONDING; INTERFACIAL DEFECT; OPTICAL LOSS; QUASI PHASE MATCHED; WAFER BONDING;

MULTILAYERS;

EID: 0031647097     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838262     Document Type: Article

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