InGaAsP lasers on GaAs fabricated by the surface activated wafer direct bonding method at room temperature

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1405-1407

  Chung, TaekRyong ^a   Hosoda, Naoe ^a   Suga, Tadatomo ^a   Takagi, Hideki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Monolithic; Optical communication; Optical interconnection; Optoelectronic integrated circuit; Room temperature; Surface activated bonding; Wafer bonding

Indexed keywords

EID: 0342727333     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1405     Document Type: Article

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