High-brightness AlGaInP light emitting diodes

Proceedings of the IEEE

Volumn 85, Issue 11, 1997, Pages 1752-1763

  Vanderwater, D A ^a   Tan, I H ^a   Hofler G E ^a   Defevere, D C ^a   Kish, F A ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Light emitting diodes; Semiconductor wafer bonding

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SOLID STATE DEVICES; VAPOR PHASE EPITAXY;

METALLORGANIC CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH TECHNIQUE; SEMICONDUCTOR WATER BONDING;

LIGHT EMITTING DIODES;

EID: 0031268346     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/5.649654     Document Type: Article

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