Direct wafer bonding and layer transfer: an innovative way for the integration of ferroelectric oxides into silicon technology

Materials Research Society Symposium - Proceedings

Volumn 493, Issue , 1998, Pages 517-522

  Alexe, M ^a   Senz, S ^a   Pignolet, A ^a   Scott, J F ^a   Hesse, D ^a   Gosele, U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CRYSTALLIZATION; DEPOSITION; FABRICATION; FERROELECTRIC MATERIALS; SEMICONDUCTOR MATERIALS; SILICON WAFERS; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION;

HETEROJUNCTIONS;

EID: 0031704322     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)