Highly reliable and efficient semiconductor wafer-bonded AlGalnP/GaP light-emitting diodes

Electronics Letters

Volumn 32, Issue 2, 1996, Pages 132-134

  Kish, F A ^a   Vanderwater, D A ^a   DeFevere, D C ^a   Steigerwald, D A ^a   Hofler, G E ^a   Park, K G ^a   Steranka, F M ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Light emitting diodes; Optoelectronic devices; Semiconductor devices

Indexed keywords

BONDING; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; VAPOR PHASE EPITAXY;

CRYSTALLOGRAPHIC ORIENTATION; SEMICONDUCTOR WAFER BONDING; TRANSPARENT SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 0029754371     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960098     Document Type: Article

References (8)

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