Structural quality of directly bonded silicon wafers with regularly grooved interfaces

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages 622-627

  Kim, E D ^a,c   Kim, S C ^a   Park, J M ^a   Grekhov, I V ^b   Argunova, T S ^b   Kostina, L S ^b   Kudryavtzeva, T V ^b  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

^b IOFFE INSTITUTE   (Russian Federation)

^c ELECTROCHEMICAL SOCIETY   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; SILICON DIRECT BONDING; X RAY DIFFRACTION TOPOGRAPHY;

SILICON WAFERS;

EID: 0031078763     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837457     Document Type: Article

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