IC-compatible silicon wafer-to-wafer bonding

Sensors and Actuators, A: Physical

Volumn 60, Issue 1-3, 1997, Pages 208-211

  Berthold, Axel ^a   Vellekoop, Michael J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

IC compatible; Low temperature; Silicon fusion bonding

Indexed keywords

ANNEALING; INTEGRATED CIRCUIT MANUFACTURE; PRINTED CIRCUITS; SILICON WAFERS; SURFACE TREATMENT;

CHEMICAL TREATMENT; SILICON FUSION BONDING PROCESS;

BONDING;

EID: 0031144975     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01355-1     Document Type: Article

References (15)

1. B. Müller and A. Stoffel, Tensile strength characterization of low-temperature fusion-bonded silicon wafers, J. Micromech. Microeng., 1 (1991) 161-166.
2. J. Jiao, D. Lu, B. Xiong and W. Wang, Low temperature SDB and interface behaviors, Sensors and Actuators A, 50 (1995) 117-120.
3. C. Harendt, H.-G. Graf, B. Hoefflinger and E. Penteker, Silicon fusion bonding and its characterization, J. Micromech. Microeng, 9 (1992) 113-116.
4. G. Kissinger and W. Kissinger, Void-free silicon-wafer-bond strengthening in the 200-400 °C range, Sensors and Actuators A, 36 (1993) 149-156.
5. Q.-Y. Tong, G. Kaido, L. Tong, M. Reiche, F. Shi, J. Steinkirchner, T.Y. Tan and U. Gösele, A simple chemical treatment for preventing thermal bubbles in silicon wafer bonding, J. Electrochem. Soc., 142 (1995) L201-L203.
6. P.W. Barth, Silicon fusion bonding for fabrications of sensors, actuators and microstructures, Sensors and Actuators, A21-A23 (1990) 919-926.
7. C. Harendt, H.-G. Graf, E. Penteker, B. Hoefflinger, Wafer bonding: investigation and in situ observation of the bond process, Sensors and Actuators, A21-A23 (1990) 927-930.
8. L. Guerin, M.A. Schaer, R. Sachot, M. Dutoit, New multichip-on-silicon packaging scheme, Sensors and Actuators A, 52 (1996) 156-160.
9. U. Gösele, H. Stenzel, T. Martini, J. Steinkircher, D. Conrad and K. Scheerschmidt, Self-propagating room-temperature silicon wafer bonding in ultrahigh vacuum, Appl. Phys. Lett., 67 (1995) 3614-3616.
10. Ammoniumfluoride menging corrosiefe AEW 33-33-33, product information, Riedel-de Haen AG.
11. J.F.L. Goosen, B.P. van Drieënhuizen, P.J. French and R.F. Wolffenbuttel, Problems of sacrifical etching in a combined surface micromachining and electronic process, Proc. 1996 National Sensor Conf., Delft, The Netherlands, 1996, pp. 193-196.
12. T. Hattori, K. Takase, H. Yamagshi, R. Sugino, Y. Nara and T. Ito, Chemical structures of native oxides formed during wet chemical treatments, Jpn. J. Appl. Phys., 28 (1989) L296-L298.
13. Q.-Y. Tong and U. Gösele, A model of low-temperature wafer bonding and its applications, J. Electrochem. Soc., 143 (1996) 1773-1779.
14. R.K. Iler, The Chemistry of Silica, John Wiley, New York, 1979, p. 629.
15. R.K. Iler, The Chemistry of Silica, John Wiley, New York, 1979, p. 635.