Structural and electrical investigations of silicon wafer bonding interfaces

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 164-167

  Benamara, Mourad ^a   Rocher, André ^a   Sopéna, Pierre ^a   Claverie, Alain ^a   Laporte, Angéline ^b   Sarrabayrouse, Gérard ^b   Lescouzères, Lionel ^c   Peyre Lavigne, André ^c  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

^c MOTOROLA INC   (United States)

Author keywords

Electron beam induced current; Silicon; Spreading resistance; Transmission electron microscopy; Wafer bonding

Indexed keywords

ANNEALING; BONDING; CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTRIC RESISTANCE; ELECTRON BEAMS; INDUCED CURRENTS; INTERFACES (MATERIALS); OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

BORON-DOPED CZOCHRALSKY SILICON WAFER; ELECTRON BEAM INDUCED CURRENT (EBIC); FLOAT ZONE SILICON WAFERS; HYDROPHOBIC CLEANING; SPREADING RESISTANCE (SR);

SILICON WAFERS;

EID: 0042856341     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01699-6     Document Type: Article

References (5)

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2. A. Laporte, M. Bagneres, D. Strutzemberger, J.M. Reynes and G. Sarrabayrouse, 7th Int. Symp Power Semiconductor Devices and ICs, Yokohama, Japan, May 1995.
3. F. Battistella and A. Rocher, Semicond. Sci. Technol. 2 (1987) 226-232.
4. M. Benamara, A. Rocher, A. Laporte, G. Sarrabayrouse, L. Lescouzères, A. Peyre-Lavigne and A. Claverie, MRS Proc., 378 (1995) 863-868.
5. V. Macary, G. Sarrabayrouse, M. Bafleur, J.M. Reynes and A. Claverie, Proc. 2nd Int. Symp. Semiconductor Wafer Bonding, Honolulu, Hawai, 1993, pp. 463-472.