메뉴 건너뛰기




Volumn 15, Issue 4, 1997, Pages 1065-1073

On the mechanism of the hydrogen-induced exfoliation of silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0342727389     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589416     Document Type: Article
Times cited : (326)

References (23)
  • 7
    • 85087579700 scopus 로고    scopus 로고
    • note
    • y species, exclusively. Therefore, the fate of the interstitials that are necessarily produced by vacancy creation is, as yet, unresolved.
  • 16
    • 17044396344 scopus 로고
    • ss of the coupled monohydride on the flat (100) terraces; the antisymmetric component is not observed due to the decreased relative sensitivity to such "parallel" modes upon developing micron-sized internal cracks (Ref. 10).
    • (1991) J. Chem. Phys. , vol.95 , pp. 2897
    • Jakob, P.1    Chabal, Y.J.2
  • 19
    • 0024108027 scopus 로고
    • N. M. Johnson, F. A. Ponce, R. A. Street, and R. J. Nemanich, Phys. Rev. B 35, 4166 (1987); H. P. Strunk, H. Cerva, and E. G. Mohr, J. Electrochenil Soc. 135, 2876 (1989).
    • (1989) J. Electrochenil Soc. , vol.135 , pp. 2876
    • Strunk, H.P.1    Cerva, H.2    Mohr, E.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.