Molecular dynamics simulations of silicon wafer bonding

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 1, 1996, Pages 7-12

  Conrad, D ^a   Scheerschmidt, K ^a   Gosele, U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ORIENTATION; ENERGY DISSIPATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; SURFACES;

ADSORBATES; DYNAMIC BONDING BEHAVIOUR; KINETIC ENERGY; ROTATIONAL MISORIENTATIONS; STILLINGER-WEBER POTENTIAL; SURFACE STEPS;

SILICON WAFERS;

EID: 0029755701     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050258     Document Type: Article

References (29)