Nondestructive evaluation of interfaces in bonded silicon-on-insulator structures using the picosecond ultrasonics technique

Electrochemical and Solid-State Letters

Volumn 1, Issue 1, 1998, Pages 54-55

  Hao, H Y ^a   Maris, H J ^a   Sadana, D K ^b  

^a BROWN UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; INTERFACES (MATERIALS); NONDESTRUCTIVE EXAMINATION; ULTRASONIC APPLICATIONS;

PICOSECOND ULTRASONIC TECHNIQUES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032121522     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390633     Document Type: Article

References (4)

1. T. Abe, M. Nakano, and T. Itoh, in Silicon-on-Insulator Technology and Devices, D. Schmidt, Editor, PV 90-6, p. 61, The Electrochemical Society Proceedings Series, Pennington, NJ (1990).
2. H. J. Hovel, in Silicon-on-Insulator Technology and Devices, S. Cristoloveanu, Editor, PV 94-11, p. 133, The Electrochemical Society Proceedings Series, Pennington, NJ (1994).
3. C. Thomsen, H. T. Grahn, H. J. Maris, and J. Tauc, Phys. Rev. B, 34, 4129 (1986).
4. B. A. Auld, Acoustic Fields and Waves in Solids, Vol. 1, 2nd ed., p. 129 (1990).