Analysis of bonding-related gas enclosure in micromachined cavities sealed by silicon wafer bonding

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1106-1111

  Mack, S ^a   Baumann, H ^b   Gosele U ^a   Werner, H ^c   Schlogl R ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GLASS BONDING; HYDROGEN; MASS SPECTROMETRY; MICROMACHINING; NITROGEN; PRESSURE CONTROL; WATER;

ANODIC BONDING; QUADRUPLE MASS SPECTROSCOPY;

SILICON WAFERS;

EID: 0031101856     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837540     Document Type: Article

References (15)

1. H. Baumann, S. Mack, and H. Münzel, Semiconductor Wafer Bonding: Physics and Applications, C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gösele, Editors, PV 95-7, p. 471, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
2. J. B. Lasky, Appl. Phys. Lett., 48, 78 (1986).
3. G. Wallis and D. I. Pommerantz, J. Appl. Phys., 40, 3946 (1969).
4. K. Minami, T. Moriuchi, and M. Esashi, in The 8th International Comference on Solid-State Sensors and Actuators, and Eurosensors IX, p. 240, Stockholm, Sweden (1995).
5. T. Rogers and A. Kowal, Sens. Actuators, 46-47, 113 (1995).
6. K. Yoshimi, K. Minami, Y. Wakabayrashi, and M. Esashi, in Technical Digest of 11th Sensor Symposium, Tokyo, p. 240 (1992).
7. S. Mack, H. Baumann, and U. Gösele, Sens. Acutators, A56, 273 (1996).
8. S. N. Farrens and C. E. Hunt, This Journal, 141, 3225 (1994).
9. K. Mitani, V. Lehmann, R. Stengl, D. Fejoo, U. M. Gösele, and H. Z. Massoud, Jpn. J. Appl. Phys., 30, 615 (1991).
10. N. F. Raley, J. C. Davidson, and J. W. Balch, Proc. SPIE, 2639, 40 (1995).
11. D. E. Carlson, K. W. Hang, and G. F. Stockdale, J. Am. Ceram. Soc., 55, 337 (1972).
12. C. Herendt, H.-G. Graf, B. Höfflinger, and E. Penteker, Sens. Mater. 3, 173 (1992).
13. K. Ljungberg, A. Söderbärg, and Y. Bäcklund, Appl. Phys. Lett., 62, 1362 (1993).
14. Q.-Y. Tong and U. Gösele, in Semiconductor Wafer Bonding: Physics and Applications, C. E. Hunt, H. Baumgart, S. S. Iyer, T. Abe, and U. Gösele, Editors, PV 95-7, p. 78, The Electrochemical Society Proceedings Series, Pennington, NJ (1995).
15. U. Gösele, H. Stenzel, T. Martini, J. Steinkirchner, D. Conrad, and K. Scheerschmidt, Appl. Phys. Lett., 67, 3614 (1995).