Low temperature direct bonding of silicon and silicon dioxide by the surface activation method

International Conference on Solid-State Sensors and Actuators, Proceedings

Volumn 1, Issue , 1997, Pages 657-660

  Takagi, Hideki ^a   Maeda, Ryutaro ^a   Chung, Teak Ryong ^a   Suga, Tadatomo ^a  

^a Ministry of International Trade and Industry   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOND STRENGTH (MATERIALS); BONDING; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; LOW TEMPERATURE OPERATIONS; OXIDATION; SILICA; SILICON WAFERS; SURFACE CLEANING;

ARGON BEAM ETCHING; ROOM TEMPERATURE BONDING; WAFER DIRECT BONDING;

MICROELECTRONIC PROCESSING;

EID: 0030685403     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)