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Volumn 66, Issue 1, 1998, Pages 13-22

A model of strain relaxation in hetero-epitaxial films on compliant substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); PLASTIC DEFORMATION; RELAXATION PROCESSES; SUBSTRATES; THIN FILMS;

EID: 0031654189     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050631     Document Type: Article
Times cited : (32)

References (15)
  • 3
    • 0030125305 scopus 로고    scopus 로고
    • The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface
    • April
    • For an overview, see F.K. LeGoues: The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface, MRS Bull., Vol. 21, No.4, p.45 (April, 1996)
    • (1996) MRS Bull. , vol.21 , Issue.4 , pp. 45
    • LeGoues, F.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.