Dislocations in silicon structures prepared by direct bonding of surfaces with a relief

Physics of the Solid State

Volumn 38, Issue 11, 1996, Pages 1832-1834

  Argunova, T S ^a   Grekhov, I V ^a   Gutkin, M Yu ^a   Kostina, L S ^a   Belyakova, E N ^a   Kudryavtseva, T V ^a   Kim, E D ^b   Park, D M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030355494     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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