AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 8, 1996, Pages 4199-4202

  Chang, Shoou Jinn ^a   Sheu, Jinn Kong ^a   Su, Yan Kuin ^a   Jou, Ming Jiunn ^b   Chi, Gou Chung ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaInP; GaP; LED; MOVPE; Wafer direct bonding

Indexed keywords

BAND-GAP TRANSITION; WAFER DIRECT BONDING TECHNIQUE;

BONDING; EPITAXIAL GROWTH; ETCHING; EXPERIMENTS; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

LIGHT EMITTING DIODES;

EID: 0030205572     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4199     Document Type: Article

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