Room temperature-operating spin-valve transistors formed by vacuum bonding

Science

Volumn 281, Issue 5375, 1998, Pages 407-409

  Monsma, D J ^a,b   Vlutters, R ^a   Lodder, J C ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; BONDING; ELECTRONS; FERROMAGNETIC MATERIALS; MAGNETIC FIELD EFFECTS; MULTILAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; VACUUM APPLICATIONS;

SPIN VALVE TRANSISTOR; VACUUM BONDING;

TRANSISTORS;

FERROMAGNETIC MATERIAL; SILICON;

AIR TEMPERATURE; ARTICLE; ATMOSPHERIC PRESSURE; DEVICE; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0032540916     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.281.5375.407     Document Type: Article

References (2)

1. M. N. Baibich et al., Phys. Rev. Lett. 61, 2472 (1988).
2. For a review, see M. A. M. Gijs and G. E. W. Bauer, Adv. Phys. 46, 285 (1997).