Lattice engineered compliant substrate for defect-free heteroepitaxial growth

Applied Physics Letters

Volumn 70, Issue 13, 1997, Pages 1685-1687

  Ejeckam, F E ^a   Lo, Y H ^a   Subramanian, S ^a,c   Hou, H Q ^b   Hammons, B E ^b  

^a Cornell University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000356406     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118669     Document Type: Article

References (7)

1. Z. L. Liao and D. E. Mull, Appl. Phys. Lett. 560, 737 (1990).
2. Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee, Appl. Phys. Lett. 58, 1961 (1991).
3. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
4. Y. H. Lo, Appl. Phys. Lett. 59, 2311 (1991).
5. D. Teng and Y. H. Lo, Appl. Phys. Lett. 62, 43 (1993).
6. D. Hull and D. J. Bacon, Introduction to Dislocations (1984). Vol. 37, p. 184.
7. A. Thölen, Phys. Status Solidi A 2, 537 (1970).