Si and SiC layer transfer by high temperature hydrogen implantation and lower temperature layer splitting

Electronics Letters

Volumn 34, Issue 4, 1998, Pages 407-408

  Tong, Q Y ^a,b   Lee, T H ^a   Huang, L J ^a   Chao, Y L ^a   Gosele U ^a,b  

^a DUKE UNIVERSITY   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE OPERATIONS; HYDROGEN; ION IMPLANTATION; SEMICONDUCTING GLASS; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

LAYER SPLITTING;

SILICON WAFERS;

EID: 0032545834     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980295     Document Type: Article

References (5)

1. BRUEL, M.: 'Silicon on insulator material technology'. Electron. Lett., 1995, 31, pp. 1201-1202
2. TONG, Q.-Y., LEE, T.-H., GÖSELE, U., BRENDEL, R., BERGMANN, R., and WERNER, J.: 'Fabrication of single crystalline SiC layer on high temperature glass', J. Electrochem. Soc., 1997, 144, pp. L111-L113
3. BRUEL, M.: 'Process for the production of thin semiconductor material films'. US Patent 5, 374, 564, 1994
4. BRUEL, M.: 'Application of hydrogen ion beams to silicon on insulator material technology', Nucl. Instrum. Methods Phys. Res., 1996, B108, pp. 313-319
5. TONG, Q.-Y., GUTIJAHR, K., HOPFE, S., and LEE, T.-H.: 'Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates', Appl. Phys. Lett., 1997, 70, pp. 1390-1392