Gas development at the interface of directly bonded silicon wafers: Investigation on silicon-based pressure sensors

Sensors and Actuators, A: Physical

Volumn 56, Issue 3, 1996, Pages 273-277

  Mack, S ^a   Baumann, H ^b   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b ROBERT BOSCH GMBH   (Germany)

Author keywords

Gas enclosure; Hermetical sealing; Silicon micromechanics; Wafer bonding

Indexed keywords

ANNEALING; BONDING; PARTIAL PRESSURE SENSORS; PHASE INTERFACES; SILICON WAFERS; THERMAL DIFFUSION IN GASES; THERMAL EFFECTS; WSI CIRCUITS;

ANNEALING RELATED GAS EVOLUTION; HYDROPHILIC SILICON DIRECT BONDING; HYDROPHOBIC SILICON DIRECT BONDING; SILICON BASED PRESSURE SENSORS;

SILICON SENSORS;

EID: 0030234635     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(96)01320-9     Document Type: Article

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