New method of semiconductor devices production by wafers direct bonding

Advanced Performance Materials

Volumn 4, Issue 2, 1997, Pages 165-181

  Milvidskii, M G ^a   Enisherlova, K L ^a   Reznick, V J ^a   Rusak, T F ^a   Chervyakova, E N ^a  

^a Inst of Chemical Problems of   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVES; BONDING; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MULTILAYERS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SURFACE STRUCTURE;

BONDING INTERFACES; SILICON DIRECT BONDING METHOD;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031123770     PISSN: 09291881     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008691412799     Document Type: Article

References (43)