Growth of buried oxide layers of silicon-on-insulator structures by thermal oxidation of the top silicon layer

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages 2205-2210

  Schroer, E ^a   Hopfe, S ^a   Tong, Q Y ^a,c   Gosele U ^a   Skorupa, W ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SOLUBILITY; SUPERSATURATION; THERMOOXIDATION;

BURIED OXIDE LAYERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031168169     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837766     Document Type: Article

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