Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Electronics Letters

Volumn 34, Issue 4, 1998, Pages 408-409

  Jalaguier, E ^a   Aspar, B ^a   Pocas, S ^a   Michaud, J F ^a   Zussy, M ^a   Papon, A M ^a   Bruel, M ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ION IMPLANTATION; PROTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

SEMICONDUCTING FILMS;

EID: 0032545852     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980265     Document Type: Article

References (8)

1. MORI, K., TOKUTOME, K., and SUGOU, S.: 'Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding', Electron. Lett., 1995, 31, (4), pp. 284-285
2. BRUEL, M.: 'Silicon on insulator material technology', Electron. Lett., 1995, 31, (14), pp. 1201-1202
3. Smart-Cut® is a trade mark of the SOITEC company
4. DI CIOCIO, L., LE TIEC, Y., LETERTRE, F., JAUSSAUD, C., and BRUEL, M.: 'Silicon carbide on insulator formation using the Smart Cut process'. Electron. Lett., 1996, 32, (12), pp, 1144-1145
5. SNYMAN, H.C., and NEETHLING, J.H.: 'Transmission electron microscopy of extended crystal defects in proton bombarded and annealed GaAs', Radiation Effects, 1983, 69, pp. 199-230
6. ASPAR, B., BRUEL, M., MORICEAU, H., MALEVILLE, C., POUMEYROL, T., PAPON, A.M., CLAVERIE, A., BENASSAYAG, G., AUBERTON-HERVÉ, A.J., and BARGE, T.: 'Basic mechanisms involved in the Smart-Cut® process', Microelectron. Eng., 1997, 36, pp. 233-240
7. TONG, Q.-Y., GUTJAHR, K., HOPFE, S., GÖSELE, U., and LEE, T.-H.: 'Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates', Appl. Phys. Lett., 1997, 70, (11), pp. 1390-1392
8. MASZARA, W.P., GOETZ, G., CAVIGLIA, A., and MCKITTERICK., J.B.: 'Bonding of silicon wafers for silicon-on-insulator', J. Appl. Phys., 1988, 64, (10), pp. 4943-4950