Quantitative secondary ion mass spectrometry analysis of SiO2 desorption during in situ heat cleaning

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 148-152

  Kasper, E ^a   Bauer, M ^a   Oehme, M ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Boron contamination; In situ cleaning oxide desorption; Interface; Si MBE

Indexed keywords

ANNEALING; DESORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; SUBSTRATES; SURFACE CLEANING; SURFACE STRUCTURE; THERMAL EFFECTS; VACUUM APPLICATIONS;

ULTRA HIGH VACUUM (UHV);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032063830     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00464-7     Document Type: Article

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