Welded silicon for power electronic devices

International Journal of Materials and Product Technology

Volumn 11, Issue 1-2, 1996, Pages 145-158

  Parkes, Colin ^a   Mitchell, S J Neil ^a   Armstrong, B Mervyn ^a   Gamble, Harold S ^a   Ling, Edmond T G ^a  

^a NONE

Author keywords

Buried layers; Gate turn off (GTO) thyristors; Interdigitation; Silicon direct bonding (SDB); Silicon wafer bonding welding; Thyristors

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; BONDING; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; THYRISTORS; WELDING;

BURIED LAYERS; INTERDIGITATION; SILICON DIRECT BONDING;

SILICON WAFERS;

EID: 0029705492     PISSN: 02681900     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Watanabe, M., Takahashi, Y., Endo, K., Kakigi, H. and Hashimoto, O. (1990) 'A 115mm 6kV 2500A light triggered thyristor', IEEE Trans. Electron Dev., vol. ED-37, pp. 285-289.
2. Taylor, P.D., Finlay, W.J. and Denyer, R.T. (1985) 'High-voltage high current GTO thyristors', IEEE Proc., vol. 132, pt. 1, no. 6, pp. 238-243.
3. Alder, M.S., Owyang, K.W., Baliga, B.J. and Kokosa, R.A. (1984) 'The evolution of power device technology', IEEE Trans. Electron Dev, vol. ED-31, pp. 1570-1591.
4. Silard, A. (1984) 'A double interdigitated GTO switch', IEEE Trans. Electron. Dev., vol. ED-31, pp. 322-328.
5. Ishibashi, S., Kubo, T., Kawamura, T., Suzuki, T. and Suekoa, T. (1983) 'High power buried gate turn-off thyristor with amplifying gate structure', Proc. IPEC Tokyo, pp. 33-41.
6. Shimbo, M., Furukawa, K., Fukuda, K., Tanzawa, K. (1986) 'Silicon-to-silicon direct bonding method', J. Appl. Phys., vol. 60, no. 6, pp. 2987-2989.