Fabrication of low defect density 3C-SiC on SiO2 structures using wafer bonding techniques

Journal of Electronic Materials

Volumn 27, Issue 3, 1998, Pages

  Vinod, Krishna N ^a   Zorman, Christian A ^a   Yasseen, Azzam A ^a   Mehregany, Mehran ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; EPITAXIAL GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SINGLE CRYSTALS; THERMOOXIDATION;

WAFER BONDING TECHNIQUES;

SILICON CARBIDE;

EID: 0032024344     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0207-z     Document Type: Article

References (12)

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