Surface preparation and deposited gate oxides for gallium nitride based metal oxide semiconductor devices

Materials

Volumn 5, Issue 7, 2012, Pages 1297-1335

  Long, Rathnait D ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

Author keywords

ALD; GaN growth; High ; Interface; Oxides; surfaces; Treatments

Indexed keywords

ALD; DEFECT CONCENTRATIONS; DIELECTRIC DEPOSITION; EX SITU PROCESS; GAN EPILAYERS; GAN GROWTH; GATE OXIDE; GROWTH PARAMETERS; IN-SITU; METAL OXIDE SEMICONDUCTOR; MOS GATES; MOS TECHNOLOGY; PHYSICAL AND ELECTRICAL CHARACTERIZATIONS; SEMICONDUCTOR INDUSTRY; SILICON CMOS; SURFACE PREPARATION; TREATMENTS;

ATOMIC LAYER DEPOSITION; CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; INTERFACES (MATERIALS); LITHOGRAPHY; MOS DEVICES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PROPERTIES; SURFACES;

GALLIUM NITRIDE;

EID: 84866155044     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma5071297     Document Type: Review

References (146)

1. Athanasios, D.; Evgeni, G.; Paul, C.M.; Marc. H. Advanced Gate Stacks for High-Mobility Semiconductors; Springer: Berlin, Germany, 2007; p. 2300000000.
2. Morkoc, H.; Strite, S.; Gao, G.B.; Lin, M.E.; Sverdlov, B.; Burns, M. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. J. Appl. Phys. 1994, 76, 1363-1398.
3. Translucent, Gallium Nitride on Silicon: vGaNTM. Available online: http://www.translucentinc. com/gan_on_si.php (accessed on 19 July).
4. BRIDGELUX. Available online: http://bridgelux.com/media-center/press-releases/bridgelux-demonstrates-dramatic-advancements-in-gan-on-silicon-technology-for-solid-state-lighting/ (accessed on 18 July 2012).
5. Lapedus, M. Lidow Returns with "Disruptive" GaN Startup. EE Times, 8 March 2011. Available online: http://www.eetimes.com/electronics-news/4088019/Lidow-returns-with-disruptive-GaN-startup (accessed on 18 July 2012)
6. Stevenson, R. The world's best gallium nitride. IEEE Spectrum 2010, 47, 40-45.
7. Plenty of Opportunity in Billion Dollar HB LED Materials Market. SEMI, 3 November 2009. Available online: http://www.semi.org/en/MarketInfo/CTR_032685 (accessed on 18 July 2012)
8. Huan, W.; Khan, T.; Chow, T.P. Enhancement-mode n-channel GaN MOSFETs on p and n-GaN/sapphire substrates. Electron. Device Lett. IEEE 2006, 27, 796-798.
9. Asbeck, P.M.; Yu, E.T.; Lau, S.S.; Sullivan, G.J.; van Hove, J.; Redwing, J. Piezoelectric charge densities in AlGaN/GaN HFETs Electron. Lett. 1997, 33, 1081-1083.
10. Jarndal, A.H. Large-Signal Modelling of GaN Device for High Power Amplifier Design. Ph.D. Dissertation, Universoty of Kassel, Hesse, Germany, 2006.
11. Ibbetson, J.P.; Fini, P.T.; Ness, K.D.; DenBaars, S.P.; Speck, J.S.; Mishra, U.K. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors. Appl. Phys. Lett. 2000, 77, 250-252.
12. Vetury, R.; Zhang, N.Q.; Keller, S.; Mishra, U.K. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans. Electron Devices 2001, 48, 560-566.
13. Kim, H.; Thompson, R.; Tilak, V.; Prunty, T.R.; Shealy, J.R.; Eastman, L.F. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation. IEEE Electron Dev. Lett. 2003, 24, 2002-2004.
14. 3 prepared by atomic layer deposition. J. Appl. Phys. 2010, 107, 106104:1-106104:3.
15. 2 high-k dielectric for surface passivation and gate oxide. Semicond. Sci. Technol. 2007, 22, 522-527.
16. Niiyama, Y.; Shinagawa, T.; Ootomo, S.; Kambayashi, H.; Nomura T.; Kato, S. High-power operation of normally-off GaN MOSFETs. Furukawa Rev. 2009, 36, 1-5.
17. Chung, J.W.; Roberts, J.C.; Piner, E.L.; Palacios. T. Effect of gate leakage in the subthreshold characteristics of AlGaN/GaN HEMTs. IEEE Electron Dev. Lett. 2008, 29, 1196-1198.
18. 3 as gate dielectric. Appl. Phys. Lett. 2005, 86, 063501:1-063501:3.
19. Bi, Z.; Hao, Y.; Liu, H.; Liu, L.; Feng, Q. Characteristics analysis of gate dielectrics in AlGaN/GaN MIS-HEMT. In Proceedings of IEEE International Conference of Electron Devices and Solid-State Circuits EDSSC, Xian, China, 25-27 December 2009.
20. 3 as gate dielectric. Mater. Sci. Eng. B 2006, 135, 282-284.
21. Matocha, K.; Chow, T.P.; Gutmann, R.J. High-voltage normally off GaN MOSFETs on sapphire substrates. IEEE Trans. Electron Devices 2005, 52, 6-10.
22. 2 as a gate dielectric. Microelectron. Eng. 2010, 87, 2042-2045.
23. International Technology Roadmap for Semiconductors. Available online: http://public.itrs.net/ (accessed on 19 July 2012).
24. Xue, Q.K.; Xue, Q.Z.; Bakhtizin, R.Z.; Hasegawa, Y.; Tsong, I.S.T.; Sakurai, T. Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions. Phys. Rev. Lett. 1999, 82, 3074-3077.
25. Morkoç, H. Handbook of Nitride Semiconductors and Devices: GaN-Based Optical and Electronic Devicesitle; Wiley-VCH: Weinheim, Germany, 2009.
26. Tsai, M.H.; Sankey, O.F.; Schmidt K.E.; Tsong, I.S.T. Electronic structures of polar and nonpolar GaN surfaces. Mater. Sci. 2002, 88, 40-46.
27. Kočan, M.; Rizzi, A.; Luth, H.; Keller, S.; Mishra, U.K. Surface potential at as-grown GaN (0001) MBE layers. Phys. Status Solidi 2002, 234, 773-777.
28. Koblmüller, G.; Reurings, F.; Tuomisto, F.; Speck, J. Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature. Appl. Phys. Lett. 2010, 97, 191915:1-191915:3.
29. Wu, J.; Zhao, L.; Wen, D.; Xu, K.; Yang, Z.; Zhang, G.; Li H.; Zuo, R. New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactor. Appl. Surf. Sci. 2009, 255, 5926-5931.
30. Caban, P.; Strupinski, K.W.; Wojcik, M.; Gaca, J.; Szmidt, J.; Ozturk, M.; Ozbay, E. The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates. J. Cryst. Growth 2008, 310, 4876-4879.
31. Liu, G.R.; Li, X.Y. Some methods to make high quality GaN film by MOCVD. In Proceedins of Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS, Guang Zhou, China, 3-6 December 2010.
32. Lada, M.; Cullis, A.G.; Parbrook, P.J. Effect of anneal temperature on GaN nucleation layer transformation. J. Cryst. Growth 2003, 258, 89-99.
33. Hasegawa, H.; Akazawa, M. Current transport, Fermi level pinning, and transient behavior of group-III nitride schottky barriers. J. Korean Phys. Soc. 2009, 55, 1167-1179.
34. Matolin, V.; Fabik, S.; Glosik, J.; Bideux, L.; Ould-Metidji, Y.; Gruzza. B. Experimental system for GaN thin films growth and in situ characterisation by electron spectroscopic methods. Vacuum 2004, 76, 471-476.
35. Rapcewicz, K.; Nardelli, M.B.; Bernholc, J. Theory of surface morphology of wurtzite GaN(0001) surfaces. Phys. Rev. B 1997, 56, 12725-12728.
36. Bruno, G.; Losurdo, M.; Kim, T.H.; Brown, A. Adsorption and desorption kinetics of Ga on GaN(0001): Application of wolkenstein theory. Phys. Rev. B 2010, 82, 075326:1-075326:7.
37. Liu, X.Y.; Andersson, T.G. Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy. Appl. Surf. Sci. 2004, 226, 331-334.
38. Zheng, L.X.; Xie, M.H.; Seutter, S.M.; Cheung, S.H.; Tong, S.Y. Observation of "ghost" islands and surfactant effect of surface gallium atoms during gan growth by molecular beam epitaxy. Phys. Rev. Lett. 2000, 85, 2352-2355.
39. Xie, M.H.; Gong, M.; Pang, E.K.Y.; Wu, H.S.; Tong, S.Y. Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions. Phys. Rev. B 2006, 74, 085314:1-085314:6.
40. Takeuchi, N.; Selloni, A.; Myers, T.H.; Doolittle, A. Adsorption and diffusion of Ga and N adatoms on GaN surfaces: Comparing the effects of Ga coverage and electronic excitation. Phys. Rev. B 2005, 72, 115307:1-115307:5.
41. Hsu, J.W.P.; Manfra, M.J.S.; Chu, N.G.; Chen, C.H.; Pfeiffer, L.N.; Molnar, R.J. Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy. Appl. Phys. Lett. 2001, 78, 3980:1-3908:3.
42. Moram, M.A.; Ghedia, C.S.; Rao, D.V.S.; Barnard, J.S.; Zhang, Y.; Kappers, M.J.; Humphreys, C.J. On the origin of threading dislocations in GaN films. J. Appl. Phys. 2009, 106, 073513:1-073513:9.
43. Adelmann, C.; Brault, J.; Mula, G.; Daudin, B. Gallium adsorption on (0001) GaN surfaces. Phys. Rev. B 2003, 67, 165419:1-165419:9.
44. Wolkenstein, T.; Peshev, O. The electron factor in the kinetics of chemisorption on semiconductors. J. Catal. 1965, 4, 301-309.
45. Manske, W.T.; Ratkovich, A.S.; Lemke, C.J.; Mcellistrem, M.T. Morphology of GaN(0001) and GaN(0001) persistence of surface clusters. J. Vac. Sci. Technol. A 2003, 21, 506-514.
46. Rosa, A.; Neugebauer, J. Understanding Si adsorption on GaN(0001) surfaces using first-principles calculations. Phys. Rev. B 2006, 73, 205314:1-205314:12.
47. Cremades, A.; Görgens, L.; Ambacher, O.; Stutzmann, M.; Scholz, F. Structural and optical properties of Si-doped GaN. Phys. Rev. B 2000, 61, 2812-2818.
48. Bermudez, V.; Koleske, D.; Wickenden, A. The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation. Appl. Surf. Sci. 1998, 126, 69-82.
49. Tsuruoka, T.; Kawasaki, M.; Ushioda, S.; Franchy, R.; Naoi, Y.; Sugahara, T.; Sakai S.; Shintani, Y. Combined HREELS/LEED study on the oxidation of GaN surfaces. Surf. Sci. 1999, 428, 257-261.
50. Chua, S.J.; Choi, H.W.; Zhang, J.; Li, P. Vacancy effects on plasma-induced damage to n-type GaN. Phys. Rev. B 2001, 64, 205302:1-205302:5.
51. Nouet, G.; Ruterana, P.; Chen, J.; Lei, B.; Ye, H.; Yu, G.; Qi, M.; Li, A. Characterization of thick HVPE GaN films. Superlattice Microstruct. 2004, 36, 417-424.
52. Li, X.; Yu, T.; Tao, Y.; Deng, J.; Xu, C.; Zhang, G. Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template. Phys. Status Solid C 2011, 9, 445-448.
53. Danielsson, E.; Zetterling, C.M.; Östling, M.; Nikolaev, A.; Nikitina, I.P.; Dmitriev, V. Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC. IEEE Trans. Electron Devices 2001, 48, 444-449.
54. Hattori, A.N.; Endo, K.; Hattori, K.; Daimon, H. Applied surface science surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum. Appl. Surf. Sci. 2010, 256, 4745-4756.
55. Smith, A.R.; Feenstra, R.M.; Greve, D.W.; Neugebauer, J.; Northrup, J.E. Reconstructions of the GaN(0001) Surface. Phys. Rev. Lett. 1997, 79, 3934-3937.
56. Smith, A.; Ramachandran, V.; Feenstra, R.; Greve, D.W.; Shin, M.S.; Skowronski, M.; Neugebauer, J.; Northrup, J.E. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction. J. Vac. Sci. Technol. A 1998, 16, 1641-1645.
57. Oliver, R.A.; Nörenberg, C.; Martin, M.G.; Crossley, A.; Castell, M.R.; Briggs, G.A.D. Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy. Appl. Surf. Sci. 2003, 214, 1-10.
58. Smith, A.R.; Feenstra, R.M.; Greve, D.W.; Shin, M.S.; Skowronski, M.; Neugebauer, J.; Northrup, J.E. GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surf. Sci. 1999, 423, 70-84.
59. Christou, A.; Fantini, F. Introduction to the special issue on GaN and related nitride compound device reliability. IEEE Trans. Device Mater. Relia. 2008, 8, 239-239.
60. Van de Walle, C.G.; Janotti, A. Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B 2011, 248, 19-27.
61. Wang, F.H.; Kruger, P.; Pollmann, J. Electronic structure of 1 × 1 GaN(0001) and GaN(0001) surfaces. Phys. Rev. 2011, 64, 035305:1-035305:8.
62. Van de Walle, C.G.; Segev, D. Microscopic origins of surface states on nitride surfaces microscopic origins of surface states on nitride surfaces. J. Appl. Phys. 2005, 101, 081704:1-081704:6.
63. Reshchikov, M.A.; Morkoç, H. Luminescence properties of defects in GaN. J. Appl. Phys. 2005, 97, 061301:1-061305:95.
64. Petravic, M.; Coleman, V.A.; Kim, K.J.; Kim, B.; Li, G. Defect acceptor and donor in ion-bombarded GaN. J. Vac. Sci. Technol. A 2005, 23, 1340-1345.
65. Arehart, A.R.; Corrion, A.; Poblenz, C.; Speck, J.S.; Mishra, U.K.; Ringel, S.A. Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy. Appl. Phys. Lett. 2008, 93, 112101:1-112101:3.
66. Armstrong, A.; Arehart, A.R.; Moran, B.; DenBaars, S.P.; Mishra, U.K.; Speck, J.S.; Ringel, S.A. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 2004, 84, 374-376.
67. Segev, D.; van de Walle, C.G. Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces. Europhys. Lett. 2006, 76, doi:10.1209/epl/i2006-10250-2.
68. Plucinski, L.; Colakerol, L.; Bernardis, S.; Zhang, Y.; Wang, S.; O'Donnell, C.; Smith, K.E.; Friel, I.; Moustakas, T.D. Photoemission study of sulfur and oxygen adsorption on GaN(0001). Surf. Sci. 2006, 600, 116-123.
69. Cao, X.A; Pearton, S.J.; Dang, G.; Zhang, A.; Ren, F.; van Hove, J.M. Effects of interfacial oxides on schottky barrier contacts to n- and p-type GaN. Appl. Phys. Lett. 1999, 75, 4130-4132.
70. Hashizume, T.; Nakasaki, R.; Ootomo, S.; Oyama, S.; Hasegawa, H. Surface characterization of GaN and AlGaN layers grown by MOVPE. Mater. Sci. Eng. B 2001, 80, 309-312.
71. Edwards, N.V.; Bremser, M.D.; Weeks, T.W.; Kern, R.S.; Davies, R.F.; Aspnes, D.S. Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry. Appl. Phys. Lett. 1996, 69, 2065-2067.
72. King, S.; Barnak, J.P.; Bremser, M.D.; Tracy, K.M.; Ronning, C.; Davis, R.F.; Nemanich, R.J. Cleaning of AlN and GaN surfaces. J. Appl. Phys. 1998, 84, 5248-5260.
73. 3-oxidized GaN substrates. Phys. Status Solidi Rapid Res. Lett. 2011, 6, 22-24.
74. Diale, M.; Auret, F.; van der Berg, N.; Odendaal, R.; Roos, W. Analysis of GaN cleaning procedures. Appl. Surf. Sci. 2005, 246, 279-289.
75. Martinez, G.L.; Curiel, M.R.; Skromme, B.J.; Molnar, R.J. Surface recombination and sulfide passivation of GaN. J. Electron. Mater. 2000, 29, 325-331.
76. Maffeis, T.G.G.; Simmonds, M.C.; Clark, S.A.; Peiro, F.; Haines, P.; Parbrook, P.J. Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts. J. Appl. Phys. 2002, 92, 3179:1-3179:8.
77. Lee, K.; Donovan, S.M.; Gila, B.; Overberg, M.; Mackenzie, J.D.; Abernathy, C.R.; Wilson, R.G. Surface chemical treatment for the cleaning of AlN and GaN surfaces. J. Electrochem. Soc. 2000, 147, 3087-3090.
78. Hattori, A.; Kawamura, F.; Yoshimura, M.; Kitaoka, Y.; Mori, Y.; Hattori, K.; Daimon, H.; Endo, K. Chemical etchant dependence of surface structure and morphology on GaN (0001) substrates. Surf. Sci. 2010, 604, 1247-1253.
79. Zhou, J.; Reddic, J.; Sinha, M.; Ricker, W.; Karlinsey, J.; Yang, J.W.; Khan, M.A.; Chen, D.A.; Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy. Appl. Surf. Sci. 2002, 202, 131-138.
80. Tracy, K.; Mecouch, W.; Davis, R.; Nemanich, R.J. Preparation and characterization of atomically clean, stoichiometric surfaces of n-and p-type GaN(0001). J. Appl. Phys. 2003, 94, 3163:1-3163:10.
81. Grabow, L.C.; Uhlrich, J.J.; Kuech, T.F.; Mavrikakis, M. Surface Science Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces. Appl. Surf. Sci. 2009, 603, 387-399.
82. Koyama, Y.; Hashizume, T.; Hasegawa, H. Formation processes and properties of Schottky and Ohmic ontacts on n-type GaN for field effect transistor applications. Solid State Electron. 1999, 43, 1483-1488.
83. Benbakhti, B.; Ayubi-Moak, J.S.; Kalna, K.; Lin, D.; Hellings, G.; Brammertz, G.; de Meyerb, K.; Thayne, I.; Asenov, A. Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectron. Rel. 2010, 50, 360-364.
84. Nicollian, E.H.; Brews, J.R. MOS Physics and Technology; Wiley: Hoboken, NJ, USA, 2003.
85. 4/GaN interface. J. Appl. Phys. 2009, 106, 064902:1-064902:5.
86. 2 for gate oxide on n-type and p-type GaN. J. Electrochem. Soc. 2010, 157, H1008-H1013.
87. Alam, E.A.; Cortés, I.; Besland, M.P.; Regreny, P.; Goullet, A.; Morancho, F.; Cazarré, A.; Cordier, Y.; Isoird, K.; Olivié, F. Comparison of GaN-based MOS structures with different interfacial layer treatments. In Proceedings of the 2010 27th International Conference on Microelectronics, Nis, Serbia, 16-19 May 2010.
88. Matocha, K.; Tilak, V.; Dunne, G. Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride. Appl. Phys. Lett. 2007, 90, 123511:1-123511:2.
89. 2 on GaN: A comparative study on interfaces and electrical characteristics. Microelectron. Eng. 2011, 88, 1207-1210.
90. 2/Si Interface States. Appl. Phys. Lett. 1966, 8, 31-33.
91. Matocha, K.; Gutmann, R.J.; Chow, T.P. Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors. IEEE Trans. Electron Devices 2003, 50, 1200-1204.
92. Terman, L. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron. 1962, 5, 285-299.
93. 2 interfaces in MOS devices. Appl. Surf. Sci. 2004, 234, 475-479.
94. 2/GaN interfaces. J. Appl. Phys. 2011, 109, 084511:1-08455:9.
95. 3/GaN metal-oxide-semiconductor structures. Appl. Phys. Lett. 2007, 90, 143504:1-143504:3.
96. 2/n-GaN metal-insulator-Semiconductor structures. Appl. Phys. Lett. 2002, 80, 4756:1-4756:3.
97. Liu, X.; Chin, H.C.; Tan, L.S.; Yeo, Y.C. In situ surface passivation of gallium nitride for metal-organic chemical vapor deposition of high-permittivity gate dielectric. IEEE Trans. Electron Devices 2011, 58, 95-102.
98. 3/n-GaN Structure. Jpn. Appl. Phys. 2008, 47, 5426-5428.
99. Törndahl, T.; Ottosson, M.; Carlsson, J.O. Growth of copper metal by atomic layer deposition using copper(I) chloride, water and hydrogen as precursors. Thin Solid Films 2004, 458, 129-136.
100. Mueller, S.; Waechtler, T.; Hofmann, L.; Tuchscherer, A.; Mothes, R.; Gordan, O.; Lehmann, D.; Haidu, F.; Ogiewa, M.; Gerlich, L.; Ding, S.F.; Schulz, S.E.; Gessner, T.; Lang, H.; Zahn, D.R.T.; Qu, X.P. Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems. In Proceedings of Semiconductor Conference Dresden (SCD), Dresden, Germany, 27-28 September 2011.
101. Li, Z.; Rahtu, A.; Gordon, R.G. Atomic layer deposition of ultrathin copper metal films from a liquid copper(i) amidinate precursor. J. Electrochem. Soc. 2006, 153, C787-C794.
102. Pérez-Tomás, A.; Placidi, M.; Perpiñà, X.; Constant, A.; Godignon, P.; Jordà, X.; Brosselard, P.; Millán, J. GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling. J. Appl. Phys. 2009, 105, 114510:1-114510:6.
103. 4/GaN(0001) interface. J. Appl. Phys. 2003, 94, 3949-3954.
104. 2 on clean n- and p-type GaN(0001). J. Appl. Phys. 2003, 93, 3995-4004.
105. 3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces. Microelectron. Eng. 1999, 48, 303-306.
106. 2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process. J. Vac. Sci. Technol. A 2004, 22, 2402-2410.
107. 3) on GaN. J. Crys. Growth 2007, 301, 390-393.
108. Lee, M.L.; Mue, T.S.; Sheu, J.K.; Chang, K.H.; Tu, S.J.; Hsueh, T.H. Effect of thermal annealing on the GaN metal-oxide-semiconductor capacitors with gallium oxide gate layer. J. Electrochem. Soc. 2010, 157, H1019-H1022.
109. 4 films. J. Appl. Phys. 2004, 96, 2674-2680.
110. Herrero, A.M.; Gila, B.P.; Gerger, A.; Scheuermann, A.; Davies, R.; Abernathy, C.R.; Pearton, S.J.; Ren, F. Environmental stability of candidate dielectrics for GaN-based device applications. J. Appl. Phys. 2009, 106, 074105:1-074105:9.
111. Chen, J.J.; Gila, B.P.; Hlad, M.; Gerger, A.; Ren, F.; Abernathy, C.R.; Pearton, S.J. Determination of MgO/GaN heterojunction band offsets by X-ray photoelectron spectroscopy. Appl. Phys. Lett. 2006, 88, 042113:1-042113:3.
112. 3(111)/GaN(0001) heterostructure by X-ray photoelectron spectroscopy. Phys. Status Solidi C 2007, 4, 2330-2333.
113. 2 on GaN. Appl. Phys. Lett. 2007, 90, 232904:1-232904:3.
114. 3 gate dielectrics on GaAs grown by atomic layer deposition. Appl. Phys. Lett. 2005, 86, 152904:1-152904:3.
115. 2 interface. J. Appl. Phys. 2003, 94, 7155:1-7155:4.
116. Esposto, M.; Krishnamoorthy, S.; Nath, D.N.; Bajaj, S.; Hung, T.H.; Rajan, S. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. Appl. Phys. Lett. 2011, 99, 133503:1-133503:3.
117. 3 on GaN by CV method. Phys. Status Solidi C 2008, 5, 1992-1994.
118. 3 nanolaminate MOS capacitor on p-GaN with post metallization annealing and (NH4) 2SX treatments. IEEE Electron. Device Lett. 2009, 30, 907-909.
119. 2/MgO nanolaminates on p-GaNMOS capacitor. IEEE Electron. Device Lett. 2010, 31, 558-560.
120. Hossain, T.; Wei, D.; Edgar, J.H. Electrical characteristics of GaN and Si Based metal-oxide-semiconductor (MOS) capacitors. ECS Trans. 2011, 41, 429-437.
121. 3/n-GaN structures prepared by atomic layer deposition. Jpn. J. Appl. Phys. 2010, 49, 080201:1-080201:3.
122. Chiou, Y.L.; Huang, L.H.; Lee, C.T. GaN-based p-type metal-oxide-Semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method. Semicond. Sci. Technol. 2010, 25, doi:10.1088/0268-1242/25/4/045020.
123. 3 as gate dielectric. Appl. Phys. Lett. 2008, 93, 053504:1-053504:3.
124. Huang, W.; Khan, T.; Paul Chow, T. Comparison of MOS capacitors on n- and p-type GaN. J. Electron. Mater. 2006, 35, 726-732.
125. oC remote plasma processing. Appl. Surf. Sci. 2003, 216, 119-123.
126. 2/GaN interfaces and effects of thermal annealing. Appl. Surf. Sci. 2000, 159-160, 449-455.
127. Nepal, N.; Garces, N.Y.; Meyer, D.J.; Hite, J.K.; Mastro, M.A.; Eddy, C.R., Jr. Assessment of GaN surface pretreatment for atomic layer deposited high-k dielectrics. Appl. Phys. Express 2011, 4, 055802:1-055802:3.
128. Sze, S.M.; NG, K.K. Physics of Semicondutor Devices, 3rd ed.; Wiley: Hoboken, NJ, USA, 2007.
129. 2/GaN interfaces. J. Appl. Phys. 2011, 109, 084511:1-084511:9.
130. 3/In0.53Ga0.47 As (100) gate stacks and their passivation by hydrogen anneals. Appl. Phys. Lett. 2010, 96, 012906:1-012906:3.
131. Fleetwood, D.M. Fast and slow border traps in MOS devices. IEEE Trans. Nucl. Sci. 1996, 43, 779-786.
132. Bhat, N.; Saraswat, K.C. Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry. J. Appl. Phys. 1998, 84, 2722:1-2722:5.
133. Mehta, R. Gallium nitride alternative to silicon for more powerful electronics. Mater. World 2008, 16, 4-7.
134. Gusev, E.P.; Narayanan, V.; Frank, M.M. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges. IBM J. Res. 2006, 50, 387-410.
135. Kaushik, V.; O'Sullivan, B.; Pourtois, G.; van Hoornick, N.A.; Delabie, S.; van Elshocht, W.; Deweerd, T.; Schram, L.; Pantisano, E.; Rohr, L.A.; de Gendt, S.; Heyns, M. Estimation of fixed charge densities in hafnium-silicate gate dielectrics. IEEE Trans. Electron Devices 2006, 53, 2627-2633.
136. Park, H.; Hasan, M.; Jo, M.; Hwang, H. Metal gate and high-k gate dielectrics for sub 50 nm high performance MOSFETs. Electron. Mater. Sci. 2007, 3, 75-85.
137. 3 high-k oxide gate insulator. In Proceedings of Solid State Device Research Conference ESSDERC 09 of the European, Athens, Greece, 14-18 September 2009.
138. Chiu, H.C.; Yang, C.W.; Lin, Y.H.; Lin, R.M.; Chang, L.B.; Horng, K.Y. Device characteristics of AlGaN/GaN MOS-HEMTs using high-k praseodymium oxide layer. IEEE Trans. Electron. Devices 2008, 55, 3305-3309.
139. Saadat, O.I.; Chung, J.W.; Piner, E.L.; Palacios, T. Gate-first AlGaN/GaN HEMT technology for high-frequency applications. IEEE Electron. Device Lett. 2009, 30, 1254-1256.
140. 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors. J. Vac. Sci. Technol. B 2006, 24, 575-581.
141. 3 as gate dielectrics. IEEE Electron. Device Lett. 2011, 32, 1373-1375.
142. 2 gate dielectric AlGaN/GaN MIS-HFETs. Phys. Status Solidi C 2010, 7, 1941-1943.
143. 3 highk dielectric. Phys. Status Solidi C 2003, 2354, 2351-2354.
144. 3 interfacial passivation layer grown by atomic layer deposition. IEEE Electron. Device Lett. 2008, 29, 838-840.
145. 3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers. Jpn. J. Appl. Phys. 2004, 43, L777-L779.
146. Shimizua, S.Y.M.; Okumuraa, H.; Ohashia, H.; Araia, K.; Yanob, Y.; Akutsub, N. 1.8 kV AlGaN/GaN HEMTs with high-k/Oxide/SiN MIS structure. In Proceedings of the 19th International Symposium on Power Semiconductor Devices & ICs, Jeju, Korea, May 27-30, 2007.